1. 2019
  2. Universal building block for (1 1 0)-family silicon and germanium surfaces

    Zhachuk, R. A. & Shklyaev, A. A., 15 Nov 2019, In: Applied Surface Science. 494, p. 46-50 5 p.

    Research output: Contribution to journalArticlepeer-review

  3. 2020
  4. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journalArticlepeer-review

  5. Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators

    Shevyrin, A. A., Pogosov, A. G., Bakarov, A. K. & Shklyaev, A. A., 3 Feb 2020, In: Applied Physics Letters. 116, 5, 5 p., 053104.

    Research output: Contribution to journalArticlepeer-review

  6. Atomic structure of high Miller index Si(47 35 7) surface

    Zhachuk, R. A., Dolbak, A. E. & Shklyaev, A. A., Mar 2020, In: Surface Science. 693, 5 p., 121549.

    Research output: Contribution to journalArticlepeer-review

  7. Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting

    Shklyaev, A. A., 23 Apr 2020, In: Journal of Physics: Conference Series. 1461, 1, 3 p., 012160.

    Research output: Contribution to journalConference articlepeer-review

  8. Dependence of light reflection of germanium Mie nanoresonators on their aspect ratio

    Utkin, D. E., Anikin, K. V., Veber, S. L. & Shklyaev, A. A., Nov 2020, In: Optical Materials. 109, 5 p., 110466.

    Research output: Contribution to journalArticlepeer-review

  9. The modification of optical properties of the surfaces by the glancing angle deposition of TiO2

    Lemzyakov, A., Konstantin, K., Porosev, V., Azarov, I. & Shklyaev, A., 17 Nov 2020, Synchrotron and Free Electron Laser Radiation: Generation and Application, SFR 2020. Knyazev, B. & Vinokurov, N. (eds.). American Institute of Physics Inc., 060008. (AIP Conference Proceedings; vol. 2299).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  10. Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., Dec 2020, In: Semiconductors. 54, 12, p. 1605-1610 6 p.

    Research output: Contribution to journalArticlepeer-review

  11. Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si/In2O3:Er films

    Feklistov, K. V., Lemzyakov, A. G., Prosvirin, I. P., Gismatulin, A. A., Shklyaev, A. A., Zhivodkov, Y. A., Krivyakin, G., Komonov, A. I., Kozhukhov, A. S., Spesivsev, E. V., Gulyaev, D. V., Abramkin, D. S., Pugachev, A. M., Esaev, D. G. & Sidorov, G. Y., Dec 2020, In: Materials Research Express. 7, 12, 11 p., 125903.

    Research output: Contribution to journalArticlepeer-review

  12. 2021
  13. Особенности формирования субмикронных частиц Ge и Si методом обратной литографии

    Utkin, D. & Шкляев, А. А., 2021, Нанофизика и наноэлектроника: Материалы XXV Международного симпозиума. Нижний Новгород: Издательство Нижегородского госуниверситета, Vol. 2. p. 885-886 2 p.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

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