Electronic Structure of Magnetic Topological Insulators Mn(Bi_{1 –x}Sb _x)₂Te₄ with Various Concentration of Sb Atoms

Glazkova, D. A., Estyunin, D. A., Klimovskikh, I. I., Makarova, T. P., Tereshchenko, O. E., Kokh, K. A., Golyashov, V. A., Koroleva, A. V. & Shikin, A. M., Mar 2022, In: JETP Letters. 115, 5, p. 286-291 6 p.

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Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

Mihalyuk, A. N., Bondarenko, L. V., Tupchaya, A. Y., Gruznev, D. V., Solovova, N. Y., Golyashov, V. A., Tereshchenko, O. E., Okuda, T., Kimura, A., Eremeev, S. V., Zotov, A. V. & Saranin, A. A., 18 Jan 2024, In: Nanoscale. 16, 3, p. 1272-1281 10 p.

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Enhanced surface state protection and band gap in the topological insulator PbBi4 Te4 S3

Sumida, K., Natsumeda, T., Miyamoto, K., Silkin, I. V., Kuroda, K., Shirai, K., Zhu, S., Taguchi, K., Arita, M., Fujii, J., Varykhalov, A., Rader, O., Golyashov, V. A., Kokh, K. A., Tereshchenko, O. E., Chulkov, E. V., Okuda, T. & Kimura, A., 1 Oct 2018, In: Physical Review Materials. 2, 10, 8 p., 104201.

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Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 115, 5, (292-296), 10.1134/S0021364022100162)

Nizamov, B. A., Pshirkov, M. S., Maydykovskiy, A. I., Mamonov, E. A., Mitetelo, N. V., Soria, S., Murzina, T. V., Shvetsov, O. O., Barash, Y. S., Timonina, A. V., Kolesnikov, N. N., Deviatov, E. V., Volovik, G. E., Glazkova, D. A., Estyunin, D. A., Klimovskikh, I. I., Makarova, T. P., Tereshchenko, O. E., Kokh, K. A., Golyashov, V. A., & 8 othersKoroleva, A. V., Shikin, A. M., Sukhanova, E. V., Kvashnin, A. G., Agamalyan, M. A., Zakaryan, H. A., Popov, Z. I. & Lunkin, A. V., Nov 2022, In: JETP Letters. 116, 9, p. 657-659 3 p.

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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Matyushenko, E. V., Neizvestny, I. G., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E. & Epov, V. S., 1 Oct 2020, In: Semiconductors. 54, 10, p. 1325-1331 7 p.

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Ferromagnetic Layers in a Topological Insulator (Bi,Sb)₂Te₃Crystal Doped with Mn

Frolov, A. S., Usachov, D. Y., Fedorov, A. V., Vilkov, O. Y., Golyashov, V., Tereshchenko, O. E., Bogomyakov, A. S., Kokh, K., Muntwiler, M., Amati, M., Gregoratti, L., Sirotina, A. P., Abakumov, A. M., Sánchez-Barriga, J. & Yashina, L. V., 27 Dec 2022, In: ACS Nano. 16, 12, p. 20831-20841 11 p.

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Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

Tarasov, A. S., Kumar, N., Golyashov, V. A., Akhundov, I. O., Ishchenko, D. V., Kokh, K. A., Bazhenov, A. O., Stepina, N. P. & Tereshchenko, O. E., 15 Mar 2024, In: Applied Surface Science. 649, 9 p., 159122.

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Growth of Bi₂Se₃/graphene heterostructures with the room temperature high carrier mobility

Antonova, I. V., Nebogatikova, N. A., Stepina, N. P., Volodin, V. A., Kirienko, V. V., Rybin, M. G., Obrazstova, E. D., Golyashov, V. A., Kokh, K. A. & Tereshchenko, O. E., May 2021, In: Journal of Materials Science. 56, 15, p. 9330–9343 14 p.

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Interfacing two-dimensional and magnetic topological insulators: Bi bilayer on MnBi2Te4-family materials

Klimovskikh, I. I., Eremeev, S. V., Estyunin, D. A., Filnov, S. O., Shimada, K., Golyashov, V. A., Solovova, N. Y., Tereshchenko, O. E., Kokh, K. A., Frolov, A. S., Sergeev, A. I., Stolyarov, V. S., Trontl, V. M., Petaccia, L., Di Santo, G., Tallarida, M., Dai, J., Blanco-Canosa, S., Valla, T., Shikin, A. M., & 1 othersChulkov, E. V., Aug 2024, In: Materials Today Advances. 23, 9 p., 100511.

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Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi_1.09Gd_0.06Sb_0.85Te₃

Filnov, S. O., Surnin, Y. A., Koroleva, A. V., Klimovskikh, I. I., Estyunin, D. A., Varykhalov, A. Y., Bokai, K. A., Kokh, K. A., Tereshchenko, O. E., Golyashov, V. A., Shevchenko, E. V. & Shikin, A. M., 1 Sept 2019, In: Journal of Experimental and Theoretical Physics. 129, 3, p. 404-412 9 p.

Research output: Contribution to journal › Article › peer-review