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  1. 2017

  2. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotcenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M. & Terai, Y., 21 Mar 2017, In: Journal of Applied Physics. 121, 11, 9 p., 113101.

    Research output: Contribution to journal › Article › peer-review

  3. Determining the structure of energy in heterostructures with diffuse interfaces

    Abramkin, D. S., Bakarov, A. K., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Bulletin of the Russian Academy of Sciences: Physics. 81, 9, p. 1052-1057 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Sept 2017, In: Semiconductors. 51, 9, p. 1233-1239 7 p.

    Research output: Contribution to journal › Article › peer-review

  5. Stress-induced indirect to direct band gap transition in β -FeSi2 nanocrystals embedded in Si

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Iinuma, M. & Terai, Y., 14 Sept 2017, Proceedings of International Conference on Metamaterials and Nanophotonics, METANANO 2017. American Institute of Physics Inc., Vol. 1874. 5 p. 030007. (AIP Conference Proceedings; vol. 1874).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  6. Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes

    Rodionov, A. A., Golyashov, V. A., Chistokhin, I. B., Jaroshevich, A. S., Derebezov, I. A., Haisler, V. A., Shamirzaev, T. S., Marakhovka, I. I., Kopotilov, A. V., Kislykh, N. V., Mironov, A. V., Aksenov, V. V. & Tereshchenko, O. E., 26 Sept 2017, In: Physical Review Applied. 8, 3, 8 p., 034026.

    Research output: Contribution to journal › Article › peer-review

  7. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

    Nikiforov, V. E., Abramkin, D. S. & Shamirzaev, T. S., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1513-1516 4 p.

    Research output: Contribution to journal › Article › peer-review

  8. 2018

  9. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

  11. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  12. Spinodal Decomposition in InSb/AlAs Heterostructures

    Abramkin, D. S., Bakarov, A. K., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1392-1397 6 p.

    Research output: Contribution to journal › Article › peer-review

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