1. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E. & Valisheva, N. A., 7 May 2018, In: Journal of Applied Physics. 123, 17, 6 p., 173901.

    Research output: Contribution to journal › Article › peer-review

  2. Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators

    Surnin, Y. A., Klimovskikh, I. I., Sostina, D. M., Kokh, K. A., Tereshchenko, O. E. & Shikin, A. M., 1 Apr 2018, In: Journal of Experimental and Theoretical Physics. 126, 4, p. 535-540 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Impact of Co Atoms on the Electronic Structure of Bi2Te3 and MnBi2Te4 Topological Insulators

    Makarova, T. P., Estyunin, D. A., Fil’nov, S. O., Glazkova, D. A., Pudikov, D. A., Rybkin, A. G., Gogina, A. A., Aliev, Z. S., Amiraslanov, I. R., Mamedov, N. T., Kokh, K. A., Tereshchenko, O. E., Shikin, A. M., Otrokov, M. M., Chulkov, E. V. & Klimovskikh, I. I., May 2022, In: Journal of Experimental and Theoretical Physics. 134, 5, p. 607-614 8 p.

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  4. Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility

    Antonova, I. V., Nebogatikova, N. A., Stepina, N. P., Volodin, V. A., Kirienko, V. V., Rybin, M. G., Obrazstova, E. D., Golyashov, V. A., Kokh, K. A. & Tereshchenko, O. E., May 2021, In: Journal of Materials Science. 56, 15, p. 9330–9343 14 p.

    Research output: Contribution to journal › Article › peer-review

  5. Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

    Shikin, A. M., Voroshin, V. Y., Rybkin, A. G., Kokh, K. A., Tereshchenko, O. E., Ishida, Y. & Kimura, A., 1 Jan 2018, In: 2D Materials. 5, 1, 8 p., 015015.

    Research output: Contribution to journal › Article › peer-review

  6. Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study

    Klimovskikh, I. I., Shikin, A. M., Otrokov, M. M., Ernst, A., Rusinov, I. P., Tereshchenko, O. E., Golyashov, V. A., Sánchez-Barriga, J., Varykhalov, A. Y., Rader, O., Kokh, K. A. & Chulkov, E. V., 13 Jun 2017, In: Scientific Reports. 7, 1, p. 3353 8 p., 3353.

    Research output: Contribution to journal › Article › peer-review

  7. Geometric and electronic structure of the cs-doped Bi2Se3(0001) surface

    Otrokov, M. M., Ernst, A., Mohseni, K., Fulara, H., Roy, S., Castro, G. R., Rubio-Zuazo, J., Ryabishchenkova, A. G., Kokh, K. A., Tereshchenko, O. E., Aliev, Z. S., Babanly, M. B., Chulkov, E. V., Meyerheim, H. L. & Parkin, S. S. P., 22 May 2017, In: Physical Review B. 95, 20, 9 p., 205429.

    Research output: Contribution to journal › Article › peer-review

  8. Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

    Tarasov, A. S., Kumar, N., Golyashov, V. A., Akhundov, I. O., Ishchenko, D. V., Kokh, K. A., Bazhenov, A. O., Stepina, N. P. & Tereshchenko, O. E., 15 Mar 2024, In: Applied Surface Science. 649, 9 p., 159122.

    Research output: Contribution to journal › Article › peer-review

  9. Ferromagnetic Layers in a Topological Insulator (Bi,Sb)2Te3Crystal Doped with Mn

    Frolov, A. S., Usachov, D. Y., Fedorov, A. V., Vilkov, O. Y., Golyashov, V., Tereshchenko, O. E., Bogomyakov, A. S., Kokh, K., Muntwiler, M., Amati, M., Gregoratti, L., Sirotina, A. P., Abakumov, A. M., Sánchez-Barriga, J. & Yashina, L. V., 27 Dec 2022, In: ACS Nano. 16, 12, p. 20831-20841 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes

    Ikonnikov, A. V., Chernichkin, V. I., Dudin, V. S., Akopian, D. A., Akimov, A. N., Klimov, A. E., Tereshchenko, O. E., Ryabova, L. I. & Khokhlov, D. R., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1272-1277 6 p.

    Research output: Contribution to journal › Article › peer-review

ID: 3439409