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  1. 2022

  2. Phonons in Core-Shell CdSe/CdS Nanoplatelets Studied by Vibrational Spectroscopies

    Kurus, N. N., Milekhin, A. G., Sklyar, R. I., Saidzhonov, B. M., Vasiliev, R. B., Adichtchev, S. V., Surovtsev, N. V., Latyshev, A. V. & Zahn, D. R. T., 28 Apr 2022, In: Journal of Physical Chemistry C. 126, 16, p. 7107-7116 10 p.

    Research output: Contribution to journal › Article › peer-review

  3. Asymmetry of anticrossing between atomic steps on metal and semiconductor surfaces

    Khoroshilov, V. S., Kazantsev, D. M., Alperovich, V. L., Coupeau, C. & Drouet, M., 28 Mar 2022, In: Journal of Physics: Conference Series. 2227, 1, 012008.

    Research output: Contribution to journal › Conference article › peer-review

  4. Features and applications of the energy shift of the topological surface state

    Estyunin, D. A., Schwier, E. F., Kumar, S., Shimada, K., Kokh, K., Tereshchenko, O. E. & Shikin, A. M., 15 Mar 2022, In: Physical Review B. 105, 12, 125303.

    Research output: Contribution to journal › Article › peer-review

  5. Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSb x)2Te4 with Various Concentration of Sb Atoms

    Glazkova, D. A., Estyunin, D. A., Klimovskikh, I. I., Makarova, T. P., Tereshchenko, O. E., Kokh, K. A., Golyashov, V. A., Koroleva, A. V. & Shikin, A. M., Mar 2022, In: JETP Letters. 115, 5, p. 286-291 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

    Yurasov, D., Yablonskiy, A. N., Baidakova, N. A., Shaleev, M., Rodyakina, E. E., Dyakov, S. A. & Novikov, A., 17 Feb 2022, In: Journal Physics D: Applied Physics. 55, 7, 8 p., 075107.

    Research output: Contribution to journal › Article › peer-review

  7. Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

    Smagina, Z. V., Zinovyev, V. A., Stepikhova, M. V., Peretokin, A. V., Dyakov, S. A., Rodyakina, E. E., Novikov, A. V. & Dvurechenskii, A. V., Feb 2022, In: Semiconductors. 56, 2, p. 101-106 6 p.

    Research output: Contribution to journal › Article › peer-review

  8. Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

    Rudin, S. A., Zinovyev, V. A., Smagina, Z. V., Novikov, P. L., Shklyaev, A. A. & Dvurechenskii, A. V., 21 Jan 2022, In: Journal of Applied Physics. 131, 3, 035302.

    Research output: Contribution to journal › Article › peer-review

  9. Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

    Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

    Research output: Contribution to journal › Article › peer-review

  10. Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S

    Khatchenko, Y. E., Yakushev, M. V., Seibel, C., Bentmann, H., Orlita, M., Golyashov, V., Ponosov, Y. S., Stepina, N. P., Mudriy, A. V., Kokh, K. A., Tereshchenko, O. E., Reinert, F., Martin, R. W. & Kuznetsova, T. V., 15 Jan 2022, In: Journal of Alloys and Compounds. 890, 161824.

    Research output: Contribution to journal › Article › peer-review

  11. Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change

    Shikin, A. M., Estyunin, D. A., Zaitsev, N. L., Glazkova, D. A., Klimovskikh, I. I., Fil’nov, S. O., Rybkin, A. G., Kokh, K. A., Tereshchenko, O. E., Zvezdin, K. A. & Zvezdin, A. K., Jan 2022, In: Journal of Experimental and Theoretical Physics. 134, 1, p. 103-111 9 p.

    Research output: Contribution to journal › Article › peer-review

  12. Transport through the network of topological channels in HgTe based quantum well

    Gusev, G. M., Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Entin, M. & Mikhailov, N. N., Jan 2022, In: 2D Materials. 9, 1, 8 p., 015021.

    Research output: Contribution to journal › Article › peer-review

  13. Weak antilocalization to weak localization transition in Bi2Se3 films on graphene

    Stepina, N. P., Golyashov, V. A., Nenashev, A. V., Tereshchenko, O. E., Kokh, K. A., Kirienko, V. V., Koptev, E. S., Goldyreva, E. S., Rybin, M. G., Obraztsova, E. D. & Antonova, I. V., Jan 2022, In: Physica E: Low-Dimensional Systems and Nanostructures. 135, 114969.

    Research output: Contribution to journal › Article › peer-review

  14. Erratum to: Several Articles in JETP Letters (JETP Letters, (2022), 116, 2, (83-89), 10.1134/S0021364022601208)

    Semenin, N. V., Borisenko, A. S., Zalivako, I. V., Semerikov, I. A., Aksenov, M. D., Khabarova, K. Y., Kolachevsky, N. N., Glazyrin, S. I., Lykov, V. A., Karpov, S. A., Karlykhanov, N. G., Gryaznykh, D. A., Bychenkov, V. Y., Karelina, L. N., Shuravin, N. S., Ionin, A. S., Bakurskiy, S. V., Egorov, S. V., Golovchanskiy, I. A., Chichkov, V. I., & 6 othersBol’ginov, V. V., Ryazanov, V. V., Kazantsev, D. M., Alperovich, V. L., Tkachenko, V. A. & Kvon, Z. D., 2022, In: JETP Letters. 116, 12, p. 912-913 2 p.

    Research output: Contribution to journal › Article › peer-review

  15. Non-integer High-Harmonic Generation from a Topological Insulator Surface

    Meierhofer, M., Schmid, C. P., Weigl, L., Grössing, P., Junk, V., Gorini, C., Schlauderer, S., Ito, S., Hofmann, N., Afanasiev, D., Crewse, J., Kokh, K. A., Tereshchenko, O. E., Güdde, J., Evers, F., Wilhelm, J., Richter, K., Höfer, U. & Huber, R., 2022, International Conference on Ultrafast Phenomena, UP 2022. OSA Publishing, 2 p. W2A.2. (Optics InfoBase Conference Papers).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  16. Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces

    Kazantsev, D. M., Khoroshilov, V. S., Kozhuhov, A. S. & Alperovich, V. L., 2022, Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, p. 25-28 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2022-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  17. Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus’, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 564-570 7 p.

    Research output: Contribution to journal › Article › peer-review

  18. Ван-дер-Ваальсовый гетероэпитаксиальный рост слоистого SNSE2 на поверхностях SI(111) и BI2SE3(0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Автометрия. 58, 6, p. 21-27 7 p.

    Research output: Contribution to journal › Article › peer-review

  19. Кафедра физики полупроводников физического факультета Новосибирского государственного университета

    Альперович, В. Л., Квон, З. Д. & Латышев, А. В., 2022, In: Сибирский физический журнал. 17, 1, p. 104-117 14 p., 9.

    Research output: Contribution to journal › Article › peer-review

  20. 2021

  21. Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films

    Tarasov, A. S., Ishchenko, D. V., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Suprun, S. P., Fedosenko, E. V., Sherstyakova, V. N., Rybkin, A. G., Vilkov, O. Y. & Tereshchenko, O. E., 15 Dec 2021, In: Applied Surface Science. 569, 150930.

    Research output: Contribution to journal › Article › peer-review

  22. The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films

    Kaveev, A. K., Bondarenko, D. N. & Tereshchenko, O. E., 14 Dec 2021, In: Journal of Physics: Conference Series. 2103, 1, 012086.

    Research output: Contribution to journal › Conference article › peer-review

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