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  1. 2019

  2. Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 31 Jul 2019, In: Applied Surface Science. 483, p. 895-900 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Edge States and Capacitance of a 2D Topological Insulator

    Braginsky, L. S. & Entin, M. V., 1 Jun 2019, In: Physica Status Solidi (B) Basic Research. 256, 6, 4 p., 1800675.

    Research output: Contribution to journal › Article › peer-review

  4. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Interaction between Electrons and Dipole Excitons in Two-Dimensional Systems (Scientific Summary)

    Kalameitsev, A. V., Mahmoodian, M. M. & Chaplik, A. V., 1 Jun 2019, In: JETP Letters. 109, 12, p. 806-815 10 p.

    Research output: Contribution to journal › Article › peer-review

  6. Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

    Candussio, S., Budkin, G. V., Otteneder, M., Kozlov, D. A., Dmitriev, I. A., Bel'Kov, V. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Ganichev, S. D., 23 May 2019, In: Physical Review Materials. 3, 5, 11 p., 054205.

    Research output: Contribution to journal › Article › peer-review

  7. Topological surface states in thick partially relaxed HgTe films

    Savchenko, M. L., Kozlov, D. A., Vasilev, N. N., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Kolesnikov, A. V., 14 May 2019, In: Physical Review B. 99, 19, 7 p., 195423.

    Research output: Contribution to journal › Article › peer-review

  8. Erratum to: Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction (Journal of Experimental and Theoretical Physics, (2018), 127, 6, (1130-1135), 10.1134/S1063776118120075)

    Mahmoodian, M. M. & Chaplik, A. V., 1 May 2019, In: Journal of Experimental and Theoretical Physics. 128, 5, p. 816-816 1 p.

    Research output: Contribution to journal › Comment/debate › peer-review

  9. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journal › Article › peer-review

  10. Monte Carlo simulation of roughening at step-terraced surfaces

    Kazantsev, D. M., Shwartz, N. L. & Alperovich, V. L., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012010.

    Research output: Contribution to journal › Conference article › peer-review

  11. Surface photovoltage in a p-GaN(Cs) photocathode

    Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N. & Scheibler, H. E., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012031.

    Research output: Contribution to journal › Conference article › peer-review

  12. Conduction mechanisms of TaN/HfO x /Ni memristors

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K. & Islamov, D. R., 5 Apr 2019, In: Materials Research Express. 6, 7, 7 p., 076411.

    Research output: Contribution to journal › Article › peer-review

  13. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Apr 2019, In: Semiconductors. 53, 4, p. 434-438 5 p.

    Research output: Contribution to journal › Article › peer-review

  14. Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 22 Mar 2019, In: Physical Review B. 99, 11, 9 p., 115314.

    Research output: Contribution to journal › Article › peer-review

  15. Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe

    Gospodarič, J., Dziom, V., Shuvaev, A., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D. & Pimenov, A., 20 Mar 2019, In: Physical Review B. 99, 11, 5 p., 115130.

    Research output: Contribution to journal › Article › peer-review

  16. Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

    Shikin, A. M., Estyunin, D. A., Surnin, Y. I., Koroleva, A. V., Shevchenko, E. V., Kokh, K. A., Tereshchenko, O. E., Kumar, S., Schwier, E. F., Shimada, K., Yoshikawa, T., Saitoh, Y., Takeda, Y. & Kimura, A., 18 Mar 2019, In: Scientific Reports. 9, 1, p. 4813 17 p., 4813.

    Research output: Contribution to journal › Article › peer-review

  17. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., Markeev, A. M., Slesazeck, S., Schroeder, U., Mikolajick, T. & Krasnikov, G. Y., 1 Mar 2019, In: Acta Materialia. 166, p. 47-55 9 p.

    Research output: Contribution to journal › Article › peer-review

  18. Resonance reflection of light by ordered silicon nanopillar arrays with the vertical p-n junction

    Basalaeva, L. S., Nastaushev, Y. V., Kryzhanovskaya, N. V., Moiseev, E. I., Radnatarov, D. A., Khripunov, S. A., Utkin, D. E., Chistokhin, I. B., Latyshev, A. V. & Dultsev, F. N., 28 Feb 2019, In: Thin Solid Films. 672, p. 109-113 5 p.

    Research output: Contribution to journal › Article › peer-review

  19. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Stepina, N. P., Katsuba, A. V., Dvurechenskii, A. V., Gutakovskii, A. K., Kulik, L. V., Bogomyakov, A. S., Erenburg, S. B., Trubina, S. V. & Voelskow, M., 1 Feb 2019, In: JETP Letters. 109, 4, p. 270-275 6 p.

    Research output: Contribution to journal › Article › peer-review

  20. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators

    Rahim, A., Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Mikhailov, N. N. & Dvoretsky, S. A., 1 Feb 2019, In: Microelectronic Engineering. 206, p. 55-59 5 p.

    Research output: Contribution to journal › Article › peer-review

  21. Inverted Dirac-electron population for broadband lasing in a thermally activated p-type topological insulator

    Sumida, K., Ishida, Y., Yoshikawa, T., Chen, J., Nurmamat, M., Kokh, K. A., Tereshchenko, O. E., Shin, S. & Kimura, A., 1 Feb 2019, In: Physical Review B. 99, 8, 6 p., 085302.

    Research output: Contribution to journal › Article › peer-review

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