1. Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

    Smagina, Z. V., Zinovyev, V. A., Stepikhova, M. V., Peretokin, A. V., Dyakov, S. A., Rodyakina, E. E., Novikov, A. V. & Dvurechenskii, A. V., Feb 2022, In: Semiconductors. 56, 2, p. 101-106 6 p.

    Research output: Contribution to journalArticlepeer-review

  2. Determination of trap density in hafnia films produced by two atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 104-107 4 p.

    Research output: Contribution to journalArticlepeer-review

  3. Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 265-270 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  4. Dirac cone intensity asymmetry and surface magnetic field in V-doped and pristine topological insulators generated by synchrotron and laser radiation

    Shikin, A. M., Rybkina, A. A., Estyunin, D. A., Sostina, D. M., Klimovskikh, I. I., Voroshnin, V. Y., Rybkin, A. G., Kokh, K. A., Tereshchenko, O. E., Petaccia, L., Di Santo, G., Kimura, A., Skirdkov, P. N., Zvezdin, A. K. & Zvezdin, A. K., 25 Apr 2018, In: Scientific Reports. 8, 1, p. 6544 9 p., 6544.

    Research output: Contribution to journalArticlepeer-review

  5. Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

    Shikin, A. M., Estyunin, D. A., Surnin, Y. I., Koroleva, A. V., Shevchenko, E. V., Kokh, K. A., Tereshchenko, O. E., Kumar, S., Schwier, E. F., Shimada, K., Yoshikawa, T., Saitoh, Y., Takeda, Y. & Kimura, A., 18 Mar 2019, In: Scientific Reports. 9, 1, p. 4813 17 p., 4813.

    Research output: Contribution to journalArticlepeer-review

  6. Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., Dec 2020, In: Semiconductors. 54, 12, p. 1605-1610 6 p.

    Research output: Contribution to journalArticlepeer-review

  7. Edge capacitance of a two-dimensional topological insulator

    Entin, M. V. & Braginsky, L., 1 Sept 2017, In: Physical Review B. 96, 11, 4 p., 115403.

    Research output: Contribution to journalArticlepeer-review

  8. Edge state magnetoresistance of a two-dimensional topological insulator

    Braginsky, L. S. & Entin, M. V., May 2021, In: EPL. 134, 3, 37001.

    Research output: Contribution to journalArticlepeer-review

  9. Edge States and Capacitance of a 2D Topological Insulator

    Braginsky, L. S. & Entin, M. V., 1 Jun 2019, In: Physica Status Solidi (B) Basic Research. 256, 6, 4 p., 1800675.

    Research output: Contribution to journalArticlepeer-review

  10. Edge states in lateral p-n junctions in inverted-band HgTe quantum wells

    Piatrusha, S. U., Khrapai, V. S., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Tikhonov, E. S., 20 Dec 2017, In: Physical Review B. 96, 24, 10 p., 245417.

    Research output: Contribution to journalArticlepeer-review

Previous 1...3 4 5 6 7 8 9 10 ...45 Next

ID: 3084764