1. 2019
  2. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

    Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V. & Gebhard, F., 1 Sept 2019, In: EPL. 127, 5, 5 p., 57004.

    Research output: Contribution to journalArticlepeer-review

  3. Photon-Assisted Electron Transmission through a Quantum Point Contact

    Tkachenko, O. A., Baksheev, D. G., Tkachenko, V. A., Kvon, Z. D., Yaroshevich, A. S., Rodyakina, E. E. & Latyshev, A. V., 1 Sept 2019, In: Optoelectronics, Instrumentation and Data Processing. 55, 5, p. 480-487 8 p.

    Research output: Contribution to journalArticlepeer-review

  4. Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures

    Anikin, K. V., Milekhin, A. G., Rahaman, M., Duda, T. A., Milekhin, I. A., Rodyakina, E. E., Vasiliev, R. B., Dzhagan, V. M., Zahn, D. R. T. & Latyshev, A. V., 1 Sept 2019, In: Optoelectronics, Instrumentation and Data Processing. 55, 5, p. 488-494 7 p.

    Research output: Contribution to journalArticlepeer-review

  5. Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range

    Yakimov, A. I., Bloshkin, A. A. & Dvurechenskii, A. V., 1 Sept 2019, In: JETP Letters. 110, 6, p. 411-416 6 p.

    Research output: Contribution to journalArticlepeer-review

  6. Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

    Kosolobov, S., Nazarikov, G., Sitnikov, S., Pshenichnyuk, I., Fedina, L. & Latyshev, A., 1 Sept 2019, In: Surface Science. 687, p. 25-33 9 p.

    Research output: Contribution to journalArticlepeer-review

  7. Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion

    Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Epov, V. S. & Tereshchenko, O. E., 1 Sept 2019, In: Semiconductors. 53, 9, p. 1182-1186 5 p.

    Research output: Contribution to journalArticlepeer-review

  8. Electronic correlation determining correlated plasmons in Sb-doped B i2 S e3

    Das, P. K., Whitcher, T. J., Yang, M., Chi, X., Feng, Y. P., Lin, W., Chen, J. S., Vobornik, I., Fujii, J., Kokh, K. A., Tereshchenko, O. E., Diao, C. Z., Moon, J., Oh, S., Castro-Neto, A. H., Breese, M. B. H., Wee, A. T. S. & Rusydi, A., 4 Sept 2019, In: Physical Review B. 100, 11, 11 p., 115109.

    Research output: Contribution to journalArticlepeer-review

  9. Magnetic-impurity-induced modifications to ultrafast carrier dynamics in the ferromagnetic topological insulators Sb2-xVxTe3

    Sumida, K., Kakoki, M., Reimann, J., Nurmamat, M., Goto, S., Takeda, Y., Saitoh, Y., Kokh, K. A., Tereshchenko, O. E., Guedde, J., Hofer, U. & Kimura, A., 4 Sept 2019, In: New Journal of Physics. 21, 8 p., 093006.

    Research output: Contribution to journalArticlepeer-review

  10. Percolation description of charge transport in amorphous oxide semiconductors

    Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 12 Sept 2019, In: Physical Review B. 100, 12, 8 p., 125202.

    Research output: Contribution to journalArticlepeer-review

  11. Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots - Molecular Dynamics Calculations Using High-Efficiency Algorithms

    Novikov, P. L., Dvurechenskii, A. V. & Pavsky, K. V., Oct 2019, 2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019. Institute of Electrical and Electronics Engineers Inc., 8934013. (2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

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