Electroluminescence from HgTe quantum wells

Vasilyev, Y. B., Mikhailov, N. N., Antonov, A. V., Ikonnikov, A. V. & Gavrilenko, V. I., 2021, 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021. IEEE Computer Society, 1 p. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; vol. 2021-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Far and Mid IR stimulated emission in HgCdTe QW heterostructures

Gavrilenko, V. I., Morozov, S. V., Rumyantsev, V. V., Fadeev, M. A., Utochkin, V. V., Kulikov, N. S., Dubinov, A. A., Aleshkin, V. Y., Mikhailov, N. N., Dvoretskii, S. A., Teppe, F. & Sirtori, C., 1 Sept 2019, IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. IEEE Computer Society, 8874550. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Far-infrared stimulated emission of Dirac fermions in CdHgTe heterostructures

Morozov, S. V., Rumyantsev, V. V., Zholudev, M. S., Dubinov, A. A., Aleshkin, V. Y., Utochkin, V. V., Fadeev, M. A., Kudryavtsev, K. E., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I. & Teppe, F., 2021, 2021 46th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2021. IEEE Computer Society, 1 p. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; vol. 2021-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Oxygen polyvacancies as conductive filament in zirconia: First principle simulation

Perevalov, T. V. & Islamov, D. R., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 357-362 6 p. (ECS Transactions; vol. 80).

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Three-dimensional non-linear complex model of dynamic memristor switching

Chernov, A. A., Islamov, D. R., Pik'nik, A. A., Perevalov, T. V. & Gritsenko, V. A., 1 Jan 2016, NONVOLATILE MEMORIES 5. Karim, Z., Kobayashi, K., Shima, H., Bersuker, G., Shingubara, S., Saito, Y., Park, J. G., Magyari-Kope, B., Kubota, H. & Goux, L. (eds.). 32 ed. ELECTROCHEMICAL SOC INC, p. 95-104 10 p. (ECS Transactions; vol. 75, no. 32).

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Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 255-277 23 p.

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Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 131-155 25 p.

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The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 493-504 12 p.

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Two-Dimensional Semimetal in HgTe-Based Quantum Wells

Kvon, Z. D., Olshanetsky, E. B., Kozlov, D. A., Mikhailov, N. N. & Dvoretsky, S. A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Inc., p. 29-48 20 p.

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