1. 2019
  2. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

    Aksenov, M. S., Gutakovskii, A. K., Prosvirin, I. P., Dmitriev, D. V., Nedomolkina, A. A. & Valisheva, N. A., 1 Nov 2019, In: Materials Science in Semiconductor Processing. 102, 5 p., 104611.

    Research output: Contribution to journalArticlepeer-review

  3. Optical Diagnosis of the Geometry of an Axisymmetric Controlled Nozzle of a Gas-Turbine Engine

    Tokarev, M. P., Seredkin, A. V., Khrebtov, M. Y., Petkoglo, N. P., Vovk, M. Y., Chikishev, L. M., Dulin, V. M., Markovich, D. M. & Marchukov, E. Y., 1 Nov 2019, In: Optoelectronics, Instrumentation and Data Processing. 55, 6, p. 612-617 6 p.

    Research output: Contribution to journalArticlepeer-review

  4. Characterization of Multi-Jet Cooling Using High-Speed Visualization and IR Thermography

    Nazarov, A. D., Miskiv, N. V., Surtaev, A. S. & Serdyukov, V. S., 1 Oct 2019, In: Journal of Engineering Thermophysics. 28, 4, p. 489-498 10 p.

    Research output: Contribution to journalArticlepeer-review

  5. Methodological Characteristics of an Experimental Investigation of the Process of Evaporation of Suspended Liquid Droplets

    Bochkareva, E. M., Ley, M. K., Terekhov, V. V. & Terekhov, V. I., 1 Sept 2019, In: Journal of Engineering Physics and Thermophysics. 92, 5, p. 1171-1179 9 p.

    Research output: Contribution to journalArticlepeer-review

  6. Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Sept 2019, In: Technical Physics Letters. 45, 9, p. 951-954 4 p.

    Research output: Contribution to journalArticlepeer-review

  7. About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts

    Aksenov, M. S., Valisheva, N. A., Chistokhin, I. B., Dmitriev, D. V., Kozhukhov, A. S. & Zhuravlev, K. S., 3 Jun 2019, In: Applied Physics Letters. 114, 22, 5 p., 221602.

    Research output: Contribution to journalArticlepeer-review

  8. Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

    Osinnykh, I. V., Malin, T. V., Milakhin, D. S., Plyusnin, V. F. & Zhuravlev, K. S., 1 Jun 2019, In: Japanese Journal of Applied Physics. 58, SC, 7 p., 27.

    Research output: Contribution to journalArticlepeer-review

  9. High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

    Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L. & Mikitchuk, K. B., 1 May 2019, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2 p. 8803902. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  10. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

    Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I. & Zhuravlev, K. S., 1 Feb 2019, In: Technical Physics Letters. 45, 2, p. 180-184 5 p.

    Research output: Contribution to journalArticlepeer-review

  11. Effect of dipole blockade on the laser excitation spectra of mesoscopic ensembles of cold Rydberg atoms

    Ryabtsev, I. I., Beterov, I. I., Tretyakov, D. B., Yakshina, E. A. & Entin, V. M., 1 Jan 2019, In: Quantum Electronics. 49, 5, p. 455-463 9 p.

    Research output: Contribution to journalArticlepeer-review

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