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  1. 2022

  2. Toffoli gate based on a three-body fine-structure-state-changing Förster resonance in Rydberg atoms

    Ashkarin, I. N., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Ryabtsev, I. I., Cheinet, P., Pham, K. L., Lepoutre, S. & Pillet, P., Sept 2022, In: Physical Review A. 106, 3, 032601.

    Research output: Contribution to journal › Article › peer-review

  3. Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

    Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Y., Kazancev, D. Y. & Zhuravlev, K. S., Jun 2022, In: Semiconductors. 56, 6, p. 352-359 8 p.

    Research output: Contribution to journal › Article › peer-review

  4. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

    Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P. & Gutakovskii, A. K., 28 Feb 2022, In: Journal of Applied Physics. 131, 8, 085301.

    Research output: Contribution to journal › Article › peer-review

  5. Effect of SiO2 nanoparticle addition on the evaporation of a suspended water droplet

    Starinskaya, E. M., Nazarov, A. D., Miskiv, N. B. & Starinskiy, S. V., 2022, In: Heat Transfer Research. 53, 9, p. 43-56 14 p.

    Research output: Contribution to journal › Article › peer-review

  6. High-Speed Video Recording and IR Thermography to Study the Characteristics of a Two-Phase Flow and Heat Transfer during Spray Cooling of a Heated Surface

    Surtaev, A. S., Nazarov, A. D., Miskiv, N. B. & Serdyukov, V. S., 2022, In: High Temperature. 60, 1, p. 129-132 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2021

  8. Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., Sept 2021, In: Technical Physics Letters. 47, 9, p. 692-695 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

    Zhuravlev, K. S., Gilinskii, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L. & Mikitchuk, K. B., Sept 2021, In: Technical Physics. 66, 9, p. 1072-1077 6 p., 34.

    Research output: Contribution to journal › Article › peer-review

  10. Optical properties of native (anodic) layer on the InAlAs surface of different morphology

    Valisheva, N. A., Kruchinin, V. N., Aksenov, M. S., Azarov, I. A. & Nedomolkina, A. A., 30 Jun 2021, In: Thin Solid Films. 728, 138692.

    Research output: Contribution to journal › Article › peer-review

  11. Implementation of one-qubit quantum gates with individual addressing of two rubidium atoms in two optical dipole traps

    Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Al'yanova, N. V., Mityanin, K. Y., Ryabtsev, I. I. & Faruk, A. M., Jun 2021, In: Quantum Electronics. 51, 6, p. 464-472 9 p., 2.

    Research output: Contribution to journal › Article › peer-review

  12. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

    Aksenov, M. S., Valisheva, N. A. & Kovchavtsev, A. P., Jun 2021, In: Technical Physics Letters. 47, 6, p. 478-481 4 p.

    Research output: Contribution to journal › Article › peer-review

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