TY - JOUR

T1 - Visible room-temperature emission and excitation photoluminescence in In+- and As+-co-implanted SiO2 films

AU - Tyschenko, Ida

AU - Batalov, Rafael

AU - Shmelev, Artemii

AU - Si, Zhongbin

AU - Volodin, Vladimir

AU - Popov, Vladimir

N1 - The study was supported by the Ministry of Education and Science of the Russian Federation [Project FWGW -2021-0003].

PY - 2024/5

Y1 - 2024/5

N2 - The visible room-temperature emission and excitation photoluminescence spectra were studied as a function of the indium and arsenic profiles in the In+ and As+ ion-implanted thermally grown SiO2 films before and after the annealing at the temperature of 900 °C. As+ ions at the energy of 40 or 135 keV and In+ ions at the energy of 50 keV, providing a projective range ratio RpAs/RpIn of 1 or 3, respectively, were used. Four emission photoluminescence bands, peaked at ∼347 nm (3.57 eV), ∼440 nm (2.81 eV), ∼450 nm (2.75 eV) and ∼500 nm (2.48 eV), were obtained from the 40 keV As+ and 50 keV In+ ion-implanted samples under the excitation wavelength of 300 nm (4.13 eV), 350 nm (3.54 eV), 400 nm (3.10 eV) and 450 nm (2.75 eV), respectively. As the As+ energy increased to 135 keV, under the same excitation conditions, the emission bands peaked at 370 nm (3.35 eV), 420 nm (2.95 eV), 460 nm (2.69 eV) and 505 nm (2.45 eV) dominated in the photoluminescence spectra. The excitation spectra of the observed emission peaks were studied, too. We preliminarily interpret the observed photoluminescence peaks as a result of the T1 → S0 transition of molecular-like clusters associated with the oxygen deficiency provided by In or In–As in ion-implanted SiO2.

AB - The visible room-temperature emission and excitation photoluminescence spectra were studied as a function of the indium and arsenic profiles in the In+ and As+ ion-implanted thermally grown SiO2 films before and after the annealing at the temperature of 900 °C. As+ ions at the energy of 40 or 135 keV and In+ ions at the energy of 50 keV, providing a projective range ratio RpAs/RpIn of 1 or 3, respectively, were used. Four emission photoluminescence bands, peaked at ∼347 nm (3.57 eV), ∼440 nm (2.81 eV), ∼450 nm (2.75 eV) and ∼500 nm (2.48 eV), were obtained from the 40 keV As+ and 50 keV In+ ion-implanted samples under the excitation wavelength of 300 nm (4.13 eV), 350 nm (3.54 eV), 400 nm (3.10 eV) and 450 nm (2.75 eV), respectively. As the As+ energy increased to 135 keV, under the same excitation conditions, the emission bands peaked at 370 nm (3.35 eV), 420 nm (2.95 eV), 460 nm (2.69 eV) and 505 nm (2.45 eV) dominated in the photoluminescence spectra. The excitation spectra of the observed emission peaks were studied, too. We preliminarily interpret the observed photoluminescence peaks as a result of the T1 → S0 transition of molecular-like clusters associated with the oxygen deficiency provided by In or In–As in ion-implanted SiO2.

KW - InAs nanoclusters

KW - Ion implantation

KW - Photoluminescence

KW - SiO2

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85186954740&origin=inward&txGid=50a07b096ab10efae4fccb0a1c6c7962

UR - https://www.mendeley.com/catalogue/953072fc-539f-3337-ba25-aa7f1c47c810/

U2 - 10.1016/j.jlumin.2024.120534

DO - 10.1016/j.jlumin.2024.120534

M3 - Article

VL - 269

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

M1 - 120534

ER -