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Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures. / Kamaev, G. N.; Volodin, V. A.; Krivyakin, G. K.

в: Technical Physics Letters, Том 47, № 8, 08.2021, стр. 609-612.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kamaev, GN, Volodin, VA & Krivyakin, GK 2021, 'Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures', Technical Physics Letters, Том. 47, № 8, стр. 609-612. https://doi.org/10.1134/S1063785021060237

APA

Kamaev, G. N., Volodin, V. A., & Krivyakin, G. K. (2021). Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures. Technical Physics Letters, 47(8), 609-612. https://doi.org/10.1134/S1063785021060237

Vancouver

Kamaev GN, Volodin VA, Krivyakin GK. Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures. Technical Physics Letters. 2021 авг.;47(8):609-612. doi: 10.1134/S1063785021060237

Author

Kamaev, G. N. ; Volodin, V. A. ; Krivyakin, G. K. / Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures. в: Technical Physics Letters. 2021 ; Том 47, № 8. стр. 609-612.

BibTeX

@article{8b2d48ae7fed483d89760707e41ffd5a,
title = "Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures",
abstract = "We have studied a multilayer heteronanostructure comprising three pairs of amorphous silicon and amorphous germanium (a-Ge/a-Si:H) layers grown at 225°C on a silicon substrate by the method of low-frequency plasma-enhanced chemical vapor deposition. The phase composition of silicon and germanium layers was determined by Raman spectroscopy, which showed that the layers are completely amorphous. Transmission electron microscopy images revealed the presence of amorphous Ge nanoclusters ordered in the vertical direction, the formation of which was initiated by local nanometer-scale inhomogeneities in the first Ge layer, the lateral dimensions of which grow on the passage from bottom to top layer.",
keywords = "germanium, heteroboundary, nanocluster, self-organization, silicon",
author = "Kamaev, {G. N.} and Volodin, {V. A.} and Krivyakin, {G. K.}",
note = "Funding Information: This work was supported by the Ministry of Science and Higher Education of the Russian Federation in the framework of a State Order for Fundamental Research in the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Novosibirsk), project no. 0242-2021-001. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = aug,
doi = "10.1134/S1063785021060237",
language = "English",
volume = "47",
pages = "609--612",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "8",

}

RIS

TY - JOUR

T1 - Vertical Ordering of Amorphous Ge Nanoclusters in Multilayer a-Ge/a-Si:H Heterostructures

AU - Kamaev, G. N.

AU - Volodin, V. A.

AU - Krivyakin, G. K.

N1 - Funding Information: This work was supported by the Ministry of Science and Higher Education of the Russian Federation in the framework of a State Order for Fundamental Research in the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (Novosibirsk), project no. 0242-2021-001. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/8

Y1 - 2021/8

N2 - We have studied a multilayer heteronanostructure comprising three pairs of amorphous silicon and amorphous germanium (a-Ge/a-Si:H) layers grown at 225°C on a silicon substrate by the method of low-frequency plasma-enhanced chemical vapor deposition. The phase composition of silicon and germanium layers was determined by Raman spectroscopy, which showed that the layers are completely amorphous. Transmission electron microscopy images revealed the presence of amorphous Ge nanoclusters ordered in the vertical direction, the formation of which was initiated by local nanometer-scale inhomogeneities in the first Ge layer, the lateral dimensions of which grow on the passage from bottom to top layer.

AB - We have studied a multilayer heteronanostructure comprising three pairs of amorphous silicon and amorphous germanium (a-Ge/a-Si:H) layers grown at 225°C on a silicon substrate by the method of low-frequency plasma-enhanced chemical vapor deposition. The phase composition of silicon and germanium layers was determined by Raman spectroscopy, which showed that the layers are completely amorphous. Transmission electron microscopy images revealed the presence of amorphous Ge nanoclusters ordered in the vertical direction, the formation of which was initiated by local nanometer-scale inhomogeneities in the first Ge layer, the lateral dimensions of which grow on the passage from bottom to top layer.

KW - germanium

KW - heteroboundary

KW - nanocluster

KW - self-organization

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85121398962&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/fa11db77-b9d3-3f71-871e-afb1bddb4854/

U2 - 10.1134/S1063785021060237

DO - 10.1134/S1063785021060237

M3 - Article

AN - SCOPUS:85121398962

VL - 47

SP - 609

EP - 612

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 8

ER -

ID: 35041651