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Valence-band offsets in strained SiGeSn/Si layers with different tin contents. / Bloshkin, A. A.; Yakimov, A. I.; Timofeev, V. A. и др.

в: Semiconductors, Том 51, № 3, 01.03.2017, стр. 329-334.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bloshkin, AA, Yakimov, AI, Timofeev, VA, Tuktamyshev, AR, Nikiforov, AI & Murashov, VV 2017, 'Valence-band offsets in strained SiGeSn/Si layers with different tin contents', Semiconductors, Том. 51, № 3, стр. 329-334. https://doi.org/10.1134/S1063782617030058

APA

Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I., & Murashov, V. V. (2017). Valence-band offsets in strained SiGeSn/Si layers with different tin contents. Semiconductors, 51(3), 329-334. https://doi.org/10.1134/S1063782617030058

Vancouver

Bloshkin AA, Yakimov AI, Timofeev VA, Tuktamyshev AR, Nikiforov AI, Murashov VV. Valence-band offsets in strained SiGeSn/Si layers with different tin contents. Semiconductors. 2017 март 1;51(3):329-334. doi: 10.1134/S1063782617030058

Author

Bloshkin, A. A. ; Yakimov, A. I. ; Timofeev, V. A. и др. / Valence-band offsets in strained SiGeSn/Si layers with different tin contents. в: Semiconductors. 2017 ; Том 51, № 3. стр. 329-334.

BibTeX

@article{5abac28b73394362b2f34121ae14a6f9,
title = "Valence-band offsets in strained SiGeSn/Si layers with different tin contents",
abstract = "Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEV exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.",
keywords = "ASSEMBLED QUANTUM DOTS, HETEROSTRUCTURES, PHOTOCONDUCTIVITY, ALLOYS, GROWTH, SN",
author = "Bloshkin, {A. A.} and Yakimov, {A. I.} and Timofeev, {V. A.} and Tuktamyshev, {A. R.} and Nikiforov, {A. I.} and Murashov, {V. V.}",
year = "2017",
month = mar,
day = "1",
doi = "10.1134/S1063782617030058",
language = "English",
volume = "51",
pages = "329--334",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Valence-band offsets in strained SiGeSn/Si layers with different tin contents

AU - Bloshkin, A. A.

AU - Yakimov, A. I.

AU - Timofeev, V. A.

AU - Tuktamyshev, A. R.

AU - Nikiforov, A. I.

AU - Murashov, V. V.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEV exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.

AB - Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEV exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.

KW - ASSEMBLED QUANTUM DOTS

KW - HETEROSTRUCTURES

KW - PHOTOCONDUCTIVITY

KW - ALLOYS

KW - GROWTH

KW - SN

UR - http://www.scopus.com/inward/record.url?scp=85015671835&partnerID=8YFLogxK

U2 - 10.1134/S1063782617030058

DO - 10.1134/S1063782617030058

M3 - Article

AN - SCOPUS:85015671835

VL - 51

SP - 329

EP - 334

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 10064659