TY - GEN

T1 - Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces

AU - Kazantsev, Dmitry M.

AU - Khoroshilov, Vladimir S.

AU - Kozhuhov, Alexander S.

AU - Alperovich, Vitaly L.

N1 - Funding Information: The study was partially supported by the Russian Science Foundation (Grant No. 19-72-30023). Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - Earlier a technique was developed for thermal GaAs smoothing by annealing in the presence of Ga and As vapors. The vapors were provided in a narrow gap between two GaAs samples, or by annealing in a closed container with a Ga-As melt. At annealing temperatures up to 650°C this technique yielded step-terraced GaAs surfaces. At increased temperatures, the transition from smoothing to kinetic-driven roughening was observed. This roughening revealed itself in the formation of islands (for sublimation) and holes (for growth) of multilayer height and depth. They are formed as a result of step motion through surface areas, where the sublimation and growth did not occur. These spots also act as step stopping centers and lead to step bunching. In this paper we present the results of additional experiments which clarify the reasons of the transition from sublimation to growth (i.e. from islands to holes) in the surface roughening at elevated temperatures. The thermal smoothing technique is further developed to reduce the role of surface roughening. This development allowed us to increase the GaAs smoothing temperature up to 775°C.

AB - Earlier a technique was developed for thermal GaAs smoothing by annealing in the presence of Ga and As vapors. The vapors were provided in a narrow gap between two GaAs samples, or by annealing in a closed container with a Ga-As melt. At annealing temperatures up to 650°C this technique yielded step-terraced GaAs surfaces. At increased temperatures, the transition from smoothing to kinetic-driven roughening was observed. This roughening revealed itself in the formation of islands (for sublimation) and holes (for growth) of multilayer height and depth. They are formed as a result of step motion through surface areas, where the sublimation and growth did not occur. These spots also act as step stopping centers and lead to step bunching. In this paper we present the results of additional experiments which clarify the reasons of the transition from sublimation to growth (i.e. from islands to holes) in the surface roughening at elevated temperatures. The thermal smoothing technique is further developed to reduce the role of surface roughening. This development allowed us to increase the GaAs smoothing temperature up to 775°C.

KW - GaAs

KW - kinetic instabilities

KW - step bunching

KW - surface roughening

KW - surface smoothing

UR - http://www.scopus.com/inward/record.url?scp=85137348667&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/9bcbedd5-e260-35cd-bc62-d2a45d293d3d/

U2 - 10.1109/EDM55285.2022.9854872

DO - 10.1109/EDM55285.2022.9854872

M3 - Conference contribution

AN - SCOPUS:85137348667

SN - 9781665498043

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 25

EP - 28

BT - Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022

PB - IEEE Computer Society

T2 - 23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022

Y2 - 30 June 2022 through 4 July 2022

ER -