Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces. / Kazantsev, Dmitry M.; Khoroshilov, Vladimir S.; Kozhuhov, Alexander S. et al.
Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, 2022. p. 25-28 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2022-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - Transition from Sublimation to Growth in Thermal Smoothing and Roughening of GaAs Surfaces
AU - Kazantsev, Dmitry M.
AU - Khoroshilov, Vladimir S.
AU - Kozhuhov, Alexander S.
AU - Alperovich, Vitaly L.
N1 - Funding Information: The study was partially supported by the Russian Science Foundation (Grant No. 19-72-30023). Publisher Copyright: © 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Earlier a technique was developed for thermal GaAs smoothing by annealing in the presence of Ga and As vapors. The vapors were provided in a narrow gap between two GaAs samples, or by annealing in a closed container with a Ga-As melt. At annealing temperatures up to 650°C this technique yielded step-terraced GaAs surfaces. At increased temperatures, the transition from smoothing to kinetic-driven roughening was observed. This roughening revealed itself in the formation of islands (for sublimation) and holes (for growth) of multilayer height and depth. They are formed as a result of step motion through surface areas, where the sublimation and growth did not occur. These spots also act as step stopping centers and lead to step bunching. In this paper we present the results of additional experiments which clarify the reasons of the transition from sublimation to growth (i.e. from islands to holes) in the surface roughening at elevated temperatures. The thermal smoothing technique is further developed to reduce the role of surface roughening. This development allowed us to increase the GaAs smoothing temperature up to 775°C.
AB - Earlier a technique was developed for thermal GaAs smoothing by annealing in the presence of Ga and As vapors. The vapors were provided in a narrow gap between two GaAs samples, or by annealing in a closed container with a Ga-As melt. At annealing temperatures up to 650°C this technique yielded step-terraced GaAs surfaces. At increased temperatures, the transition from smoothing to kinetic-driven roughening was observed. This roughening revealed itself in the formation of islands (for sublimation) and holes (for growth) of multilayer height and depth. They are formed as a result of step motion through surface areas, where the sublimation and growth did not occur. These spots also act as step stopping centers and lead to step bunching. In this paper we present the results of additional experiments which clarify the reasons of the transition from sublimation to growth (i.e. from islands to holes) in the surface roughening at elevated temperatures. The thermal smoothing technique is further developed to reduce the role of surface roughening. This development allowed us to increase the GaAs smoothing temperature up to 775°C.
KW - GaAs
KW - kinetic instabilities
KW - step bunching
KW - surface roughening
KW - surface smoothing
UR - http://www.scopus.com/inward/record.url?scp=85137348667&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/9bcbedd5-e260-35cd-bc62-d2a45d293d3d/
U2 - 10.1109/EDM55285.2022.9854872
DO - 10.1109/EDM55285.2022.9854872
M3 - Conference contribution
AN - SCOPUS:85137348667
SN - 9781665498043
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 25
EP - 28
BT - Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
PB - IEEE Computer Society
T2 - 23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Y2 - 30 June 2022 through 4 July 2022
ER -
ID: 37141648