Topology of PbSnTe:In Layers Versus Indium Concentration › Обзор исследований

Standard

Topology of PbSnTe:In Layers Versus Indium Concentration. / Ishchenko, D. V.; Akimov, A. N.; Akhundov, I. O. и др.

в: Technical Physics, Том 66, № 7, 07.2021, стр. 878-882.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ishchenko, DV, Akimov, AN, Akhundov, IO, Golyashov, VA, Klimov, AE, Loginov, AB, Loginov, BA, Pashchin, NS, Tarasov, AS, Fedosenko, EV & Sherstyakova, VN 2021, 'Topology of PbSnTe:In Layers Versus Indium Concentration', Technical Physics, Том. 66, № 7, стр. 878-882. https://doi.org/10.1134/S1063784221060086

APA

Ishchenko, D. V., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Loginov, A. B., Loginov, B. A., Pashchin, N. S., Tarasov, A. S., Fedosenko, E. V., & Sherstyakova, V. N. (2021). Topology of PbSnTe:In Layers Versus Indium Concentration. Technical Physics, 66(7), 878-882. https://doi.org/10.1134/S1063784221060086

Vancouver

Ishchenko DV, Akimov AN, Akhundov IO, Golyashov VA, Klimov AE, Loginov AB и др. Topology of PbSnTe:In Layers Versus Indium Concentration. Technical Physics. 2021 июль;66(7):878-882. doi: 10.1134/S1063784221060086

Author

Ishchenko, D. V. ; Akimov, A. N. ; Akhundov, I. O. и др. / Topology of PbSnTe:In Layers Versus Indium Concentration. в: Technical Physics. 2021 ; Том 66, № 7. стр. 878-882.

BibTeX

@article{d538838bd0194864b82ff960cee381e5,

title = "Topology of PbSnTe:In Layers Versus Indium Concentration",

abstract = "The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.",

author = "Ishchenko, {D. V.} and Akimov, {A. N.} and Akhundov, {I. O.} and Golyashov, {V. A.} and Klimov, {A. E.} and Loginov, {A. B.} and Loginov, {B. A.} and Pashchin, {N. S.} and Tarasov, {A. S.} and Fedosenko, {E. V.} and Sherstyakova, {V. N.}",

note = "Funding Information: This study was partially supported by the Russian Foundation for Basic Research, grant no. 20-02-00324. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = jul,

doi = "10.1134/S1063784221060086",

language = "English",

volume = "66",

pages = "878--882",

journal = "Technical Physics",

issn = "1063-7842",

publisher = "PLEIADES PUBLISHING INC",

number = "7",

}

RIS

TY - JOUR

T1 - Topology of PbSnTe:In Layers Versus Indium Concentration

AU - Ishchenko, D. V.

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Golyashov, V. A.

AU - Klimov, A. E.

AU - Loginov, A. B.

AU - Loginov, B. A.

AU - Pashchin, N. S.

AU - Tarasov, A. S.

AU - Fedosenko, E. V.

AU - Sherstyakova, V. N.

PY - 2021/7

Y1 - 2021/7

N2 - The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.

AB - The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb1 –xSnxTe:In) has been examined using atomic force microscopy. The films have been grown on BaF2(111) single-crystal substrates and on a CaF2/BaF2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.

UR - http://www.scopus.com/inward/record.url?scp=85124420292&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/274307ce-1f8f-36c7-9126-8bf6326e5c48/

U2 - 10.1134/S1063784221060086

DO - 10.1134/S1063784221060086

M3 - Article

AN - SCOPUS:85124420292

VL - 66

SP - 878

EP - 882

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 7

ER -

ID: 35540627