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Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface. / Ponomarev, Sergei; Rogilo, Dmitry; Mironov, Alexey и др.
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. стр. 50-53 9507592 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2021-June).
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Harvard
Ponomarev, S, Rogilo, D, Mironov, A, Sheglov, D
& Latyshev, A 2021,
Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface. в
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings., 9507592, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, Том. 2021-June, IEEE Computer Society, стр. 50-53, 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021, Aya, Altai Region, Российская Федерация,
30.06.2021.
https://doi.org/10.1109/EDM52169.2021.9507592APA
Ponomarev, S., Rogilo, D., Mironov, A., Sheglov, D.
, & Latyshev, A. (2021).
Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface. в
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings (стр. 50-53). [9507592] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2021-June). IEEE Computer Society.
https://doi.org/10.1109/EDM52169.2021.9507592Vancouver
Ponomarev S, Rogilo D, Mironov A, Sheglov D
, Latyshev A.
Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface. в 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society. 2021. стр. 50-53. 9507592. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM52169.2021.9507592
Author
Ponomarev, Sergei ; Rogilo, Dmitry ; Mironov, Alexey и др. /
Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface. 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. стр. 50-53 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).
BibTeX
@inproceedings{ceee5c6124bc4fcbbdf386a5b93ef8c4,
title = "Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface",
abstract = "Properties of layered In2Se3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3-5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In2Se3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In2Se3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by 104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In2Se3 ⇔ β'-In2Se3 observed previously in the 140-180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774-6782].",
keywords = "AFM, in situ reflection electron microscopy, layered InSe, layered materials, resistance, thin films, van-der-Waals epitaxy",
author = "Sergei Ponomarev and Dmitry Rogilo and Alexey Mironov and Dmitry Sheglov and Alexander Latyshev",
note = "Funding Information: The research was financially supported by Russian Science Foundation grant number 18-72-10063. Publisher Copyright: {\textcopyright} 2021 IEEE.; 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 ; Conference date: 30-06-2021 Through 04-07-2021",
year = "2021",
month = jun,
day = "30",
doi = "10.1109/EDM52169.2021.9507592",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "50--53",
booktitle = "2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings",
address = "United States",
}
RIS
TY - GEN
T1 - Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface
AU - Ponomarev, Sergei
AU - Rogilo, Dmitry
AU - Mironov, Alexey
AU - Sheglov, Dmitry
AU - Latyshev, Alexander
N1 - Funding Information:
The research was financially supported by Russian Science Foundation grant number 18-72-10063.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/30
Y1 - 2021/6/30
N2 - Properties of layered In2Se3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3-5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In2Se3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In2Se3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by 104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In2Se3 ⇔ β'-In2Se3 observed previously in the 140-180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774-6782].
AB - Properties of layered In2Se3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3-5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In2Se3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In2Se3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by 104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In2Se3 ⇔ β'-In2Se3 observed previously in the 140-180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774-6782].
KW - AFM
KW - in situ reflection electron microscopy
KW - layered InSe
KW - layered materials
KW - resistance
KW - thin films
KW - van-der-Waals epitaxy
UR - http://www.scopus.com/inward/record.url?scp=85113568896&partnerID=8YFLogxK
U2 - 10.1109/EDM52169.2021.9507592
DO - 10.1109/EDM52169.2021.9507592
M3 - Conference contribution
AN - SCOPUS:85113568896
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 50
EP - 53
BT - 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings
PB - IEEE Computer Society
T2 - 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021
Y2 - 30 June 2021 through 4 July 2021
ER -
