Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface

Standard

Thermal Hysteresis in the Resistance of In₂Se₃Film on Si(111) Surface. / Ponomarev, Sergei; Rogilo, Dmitry; Mironov, Alexey et al.

2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. p. 50-53 9507592 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2021-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Ponomarev, S, Rogilo, D, Mironov, A, Sheglov, D & Latyshev, A 2021, Thermal Hysteresis in the Resistance of In₂Se₃Film on Si(111) Surface. in 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings., 9507592, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, vol. 2021-June, IEEE Computer Society, pp. 50-53, 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021, Aya, Altai Region, Russian Federation, 30.06.2021. https://doi.org/10.1109/EDM52169.2021.9507592

APA

Ponomarev, S., Rogilo, D., Mironov, A., Sheglov, D., & Latyshev, A. (2021). Thermal Hysteresis in the Resistance of In₂Se₃Film on Si(111) Surface. In 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings (pp. 50-53). [9507592] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2021-June). IEEE Computer Society. https://doi.org/10.1109/EDM52169.2021.9507592

Vancouver

Ponomarev S, Rogilo D, Mironov A, Sheglov D, Latyshev A. Thermal Hysteresis in the Resistance of In₂Se₃Film on Si(111) Surface. In 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society. 2021. p. 50-53. 9507592. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM52169.2021.9507592

Author

Ponomarev, Sergei ; Rogilo, Dmitry ; Mironov, Alexey et al. / Thermal Hysteresis in the Resistance of In₂Se₃Film on Si(111) Surface. 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, 2021. pp. 50-53 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

BibTeX

@inproceedings{ceee5c6124bc4fcbbdf386a5b93ef8c4,

title = "Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface",

abstract = "Properties of layered In2Se3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3-5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In2Se3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In2Se3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by 104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In2Se3 ⇔ β'-In2Se3 observed previously in the 140-180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774-6782].",

keywords = "AFM, in situ reflection electron microscopy, layered InSe, layered materials, resistance, thin films, van-der-Waals epitaxy",

author = "Sergei Ponomarev and Dmitry Rogilo and Alexey Mironov and Dmitry Sheglov and Alexander Latyshev",

note = "Funding Information: The research was financially supported by Russian Science Foundation grant number 18-72-10063. Publisher Copyright: {\textcopyright} 2021 IEEE.; 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 ; Conference date: 30-06-2021 Through 04-07-2021",

year = "2021",

month = jun,

day = "30",

doi = "10.1109/EDM52169.2021.9507592",

language = "English",

series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",

publisher = "IEEE Computer Society",

pages = "50--53",

booktitle = "2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings",

address = "United States",

}

RIS

TY - GEN

T1 - Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface

AU - Ponomarev, Sergei

AU - Rogilo, Dmitry

AU - Mironov, Alexey

AU - Sheglov, Dmitry

AU - Latyshev, Alexander

PY - 2021/6/30

Y1 - 2021/6/30

N2 - Properties of layered In2Se3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3-5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In2Se3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In2Se3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by 104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In2Se3 ⇔ β'-In2Se3 observed previously in the 140-180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774-6782].

AB - Properties of layered In2Se3 films grown on the Si(111) surface have been studied by in situ reflection electron microscopy. After the growth of 3-5 nm, the growth switches from layer-by-layer mode to the nucleation of 3D islands. Lateral dimensions of the islands increased from 310 to 410 nm when growth rate reduces from 0.02 nm/s to 0.007 nm/s. The electrical resistance of the In2Se3 films rises with 0.26 eV activation energy during cooling which corresponds to intrinsic β-In2Se3 phase having bandgap around 0.53 eVe At about 140 K, film's resistance decreases sharply by 104 times. The reverse transition occurs during heating to temperatures above 180 K. This hysteresis corresponds to a reversible structural transition β-In2Se3 ⇔ β'-In2Se3 observed previously in the 140-180 K range by scanning tunneling microscopy [ACS Nano 2 (2019) 10 6774-6782].

KW - AFM

KW - in situ reflection electron microscopy

KW - layered InSe

KW - layered materials

KW - resistance

KW - thin films

KW - van-der-Waals epitaxy

UR - http://www.scopus.com/inward/record.url?scp=85113568896&partnerID=8YFLogxK

U2 - 10.1109/EDM52169.2021.9507592

DO - 10.1109/EDM52169.2021.9507592

M3 - Conference contribution

AN - SCOPUS:85113568896

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 50

EP - 53

BT - 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings

PB - IEEE Computer Society

T2 - 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021

Y2 - 30 June 2021 through 4 July 2021

ER -

ID: 34108623