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The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies. / Islamov, D. R.; Gritsenko, V. A.; Kruchinin, V. N. и др.

в: Physics of the Solid State, Том 60, № 10, 01.10.2018, стр. 2050-2057.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Islamov, DR, Gritsenko, VA, Kruchinin, VN, Ivanova, EV, Zamoryanskaya, MV & Lebedev, MS 2018, 'The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies', Physics of the Solid State, Том. 60, № 10, стр. 2050-2057. https://doi.org/10.1134/S1063783418100098

APA

Islamov, D. R., Gritsenko, V. A., Kruchinin, V. N., Ivanova, E. V., Zamoryanskaya, M. V., & Lebedev, M. S. (2018). The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies. Physics of the Solid State, 60(10), 2050-2057. https://doi.org/10.1134/S1063783418100098

Vancouver

Islamov DR, Gritsenko VA, Kruchinin VN, Ivanova EV, Zamoryanskaya MV, Lebedev MS. The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies. Physics of the Solid State. 2018 окт. 1;60(10):2050-2057. doi: 10.1134/S1063783418100098

Author

Islamov, D. R. ; Gritsenko, V. A. ; Kruchinin, V. N. и др. / The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies. в: Physics of the Solid State. 2018 ; Том 60, № 10. стр. 2050-2057.

BibTeX

@article{428bc2e6eb334bfa9053bf17983513e5,
title = "The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies",
abstract = "The dependence of the conductivity of the films of hafnium oxide HfO2 synthesized in different modes is studied. Depending on the modes of synthesis, the conductivity of HfO2 at a fixed electric field of 1.0 MV/cm changes by four orders of magnitude. It is found that the conductivity of HfO2 is limited by the model of phonon-assisted tunneling between the traps. The thermal and optical energies of the traps Wt = 1.25 eV and Wopt = 2.5 eV, respectively, in HfO2 are determined. It is found that the exponentially strong scattering of the conductivity of HfO2 is due to the change in the trap density in a range of 4 × 1019–2.5 × 1022 cm–3. In the cathodoluminescence spectra of HfO2, a blue band with the energy of 2.7 eV is observed which is due to the oxygen vacancies. A correlation between the trap density and intensity of cathodoluminescence, as well as between the trap density and refractive index, is found. A nondestructive in situ method for the determination of the trap density of hafnium oxide with the use of the measurement of the refractive index is proposed. The optimum values of the concentrations of oxygen vacancies for emitting devices on the basis of the films of HfO2 are found.",
keywords = "ATOMIC LAYER DEPOSITION, DIELECTRICS, TRANSPORT, FILAMENT",
author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Kruchinin, {V. N.} and Ivanova, {E. V.} and Zamoryanskaya, {M. V.} and Lebedev, {M. S.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = oct,
day = "1",
doi = "10.1134/S1063783418100098",
language = "English",
volume = "60",
pages = "2050--2057",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "PLEIADES PUBLISHING INC",
number = "10",

}

RIS

TY - JOUR

T1 - The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Kruchinin, V. N.

AU - Ivanova, E. V.

AU - Zamoryanskaya, M. V.

AU - Lebedev, M. S.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - The dependence of the conductivity of the films of hafnium oxide HfO2 synthesized in different modes is studied. Depending on the modes of synthesis, the conductivity of HfO2 at a fixed electric field of 1.0 MV/cm changes by four orders of magnitude. It is found that the conductivity of HfO2 is limited by the model of phonon-assisted tunneling between the traps. The thermal and optical energies of the traps Wt = 1.25 eV and Wopt = 2.5 eV, respectively, in HfO2 are determined. It is found that the exponentially strong scattering of the conductivity of HfO2 is due to the change in the trap density in a range of 4 × 1019–2.5 × 1022 cm–3. In the cathodoluminescence spectra of HfO2, a blue band with the energy of 2.7 eV is observed which is due to the oxygen vacancies. A correlation between the trap density and intensity of cathodoluminescence, as well as between the trap density and refractive index, is found. A nondestructive in situ method for the determination of the trap density of hafnium oxide with the use of the measurement of the refractive index is proposed. The optimum values of the concentrations of oxygen vacancies for emitting devices on the basis of the films of HfO2 are found.

AB - The dependence of the conductivity of the films of hafnium oxide HfO2 synthesized in different modes is studied. Depending on the modes of synthesis, the conductivity of HfO2 at a fixed electric field of 1.0 MV/cm changes by four orders of magnitude. It is found that the conductivity of HfO2 is limited by the model of phonon-assisted tunneling between the traps. The thermal and optical energies of the traps Wt = 1.25 eV and Wopt = 2.5 eV, respectively, in HfO2 are determined. It is found that the exponentially strong scattering of the conductivity of HfO2 is due to the change in the trap density in a range of 4 × 1019–2.5 × 1022 cm–3. In the cathodoluminescence spectra of HfO2, a blue band with the energy of 2.7 eV is observed which is due to the oxygen vacancies. A correlation between the trap density and intensity of cathodoluminescence, as well as between the trap density and refractive index, is found. A nondestructive in situ method for the determination of the trap density of hafnium oxide with the use of the measurement of the refractive index is proposed. The optimum values of the concentrations of oxygen vacancies for emitting devices on the basis of the films of HfO2 are found.

KW - ATOMIC LAYER DEPOSITION

KW - DIELECTRICS

KW - TRANSPORT

KW - FILAMENT

UR - http://www.scopus.com/inward/record.url?scp=85054694639&partnerID=8YFLogxK

U2 - 10.1134/S1063783418100098

DO - 10.1134/S1063783418100098

M3 - Article

AN - SCOPUS:85054694639

VL - 60

SP - 2050

EP - 2057

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 10

ER -

ID: 17088431