Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies. / Islamov, D. R.; Gritsenko, V. A.; Kruchinin, V. N. и др.
в: Physics of the Solid State, Том 60, № 10, 01.10.2018, стр. 2050-2057.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies
AU - Islamov, D. R.
AU - Gritsenko, V. A.
AU - Kruchinin, V. N.
AU - Ivanova, E. V.
AU - Zamoryanskaya, M. V.
AU - Lebedev, M. S.
N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - The dependence of the conductivity of the films of hafnium oxide HfO2 synthesized in different modes is studied. Depending on the modes of synthesis, the conductivity of HfO2 at a fixed electric field of 1.0 MV/cm changes by four orders of magnitude. It is found that the conductivity of HfO2 is limited by the model of phonon-assisted tunneling between the traps. The thermal and optical energies of the traps Wt = 1.25 eV and Wopt = 2.5 eV, respectively, in HfO2 are determined. It is found that the exponentially strong scattering of the conductivity of HfO2 is due to the change in the trap density in a range of 4 × 1019–2.5 × 1022 cm–3. In the cathodoluminescence spectra of HfO2, a blue band with the energy of 2.7 eV is observed which is due to the oxygen vacancies. A correlation between the trap density and intensity of cathodoluminescence, as well as between the trap density and refractive index, is found. A nondestructive in situ method for the determination of the trap density of hafnium oxide with the use of the measurement of the refractive index is proposed. The optimum values of the concentrations of oxygen vacancies for emitting devices on the basis of the films of HfO2 are found.
AB - The dependence of the conductivity of the films of hafnium oxide HfO2 synthesized in different modes is studied. Depending on the modes of synthesis, the conductivity of HfO2 at a fixed electric field of 1.0 MV/cm changes by four orders of magnitude. It is found that the conductivity of HfO2 is limited by the model of phonon-assisted tunneling between the traps. The thermal and optical energies of the traps Wt = 1.25 eV and Wopt = 2.5 eV, respectively, in HfO2 are determined. It is found that the exponentially strong scattering of the conductivity of HfO2 is due to the change in the trap density in a range of 4 × 1019–2.5 × 1022 cm–3. In the cathodoluminescence spectra of HfO2, a blue band with the energy of 2.7 eV is observed which is due to the oxygen vacancies. A correlation between the trap density and intensity of cathodoluminescence, as well as between the trap density and refractive index, is found. A nondestructive in situ method for the determination of the trap density of hafnium oxide with the use of the measurement of the refractive index is proposed. The optimum values of the concentrations of oxygen vacancies for emitting devices on the basis of the films of HfO2 are found.
KW - ATOMIC LAYER DEPOSITION
KW - DIELECTRICS
KW - TRANSPORT
KW - FILAMENT
UR - http://www.scopus.com/inward/record.url?scp=85054694639&partnerID=8YFLogxK
U2 - 10.1134/S1063783418100098
DO - 10.1134/S1063783418100098
M3 - Article
AN - SCOPUS:85054694639
VL - 60
SP - 2050
EP - 2057
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 10
ER -
ID: 17088431