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The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures. / Yu Protasov, D.; Bakarov, A. K.; Toropov, A. I. и др.

в: IOP Conference Series: Materials Science and Engineering, Том 475, № 1, 012033, 18.02.2019.

Результаты исследований: Научные публикации в периодических изданияхстатья по материалам конференцииРецензирование

Harvard

Yu Protasov, D, Bakarov, AK, Toropov, AI & Zhuravlev, KS 2019, 'The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures', IOP Conference Series: Materials Science and Engineering, Том. 475, № 1, 012033. https://doi.org/10.1088/1757-899X/475/1/012033

APA

Yu Protasov, D., Bakarov, A. K., Toropov, A. I., & Zhuravlev, K. S. (2019). The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures. IOP Conference Series: Materials Science and Engineering, 475(1), [012033]. https://doi.org/10.1088/1757-899X/475/1/012033

Vancouver

Yu Protasov D, Bakarov AK, Toropov AI, Zhuravlev KS. The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures. IOP Conference Series: Materials Science and Engineering. 2019 февр. 18;475(1):012033. doi: 10.1088/1757-899X/475/1/012033

Author

Yu Protasov, D. ; Bakarov, A. K. ; Toropov, A. I. и др. / The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures. в: IOP Conference Series: Materials Science and Engineering. 2019 ; Том 475, № 1.

BibTeX

@article{285a4ad81dbe4924860c58da93752cd8,
title = "The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures",
abstract = " The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction. ",
author = "{Yu Protasov}, D. and Bakarov, {A. K.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2016 and 8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2017 ; Conference date: 24-05-2017",
year = "2019",
month = feb,
day = "18",
doi = "10.1088/1757-899X/475/1/012033",
language = "English",
volume = "475",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The deformation-potential scattering and alloy disorder scattering in donor-acceptor pHEMT heterostructures

AU - Yu Protasov, D.

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2019/2/18

Y1 - 2019/2/18

N2 - The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.

AB - The increase in the indium mole fraction in the quantum well of pHEMT heterostructures with donor-acceptor doping causes an increase in the 2DEG concentration from 2.2• 10 12 cm -2 to 3.9• 10 12 cm -2 and a decrease in mobility from 7900 cm 2 V -1 s -1 to 7500 cm 2 V -1 s -1 at room temperature. The temperature dependencies of 2DEG mobility show that the deformation potential scattering grows at increment of indium mole fraction in quantum well. Absolute values of the deformation potential are approximately two times smaller than the widely used values and increases with increasing of indium mole fraction.

UR - http://www.scopus.com/inward/record.url?scp=85062690649&partnerID=8YFLogxK

U2 - 10.1088/1757-899X/475/1/012033

DO - 10.1088/1757-899X/475/1/012033

M3 - Conference article

AN - SCOPUS:85062690649

VL - 475

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

IS - 1

M1 - 012033

T2 - 7th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2016 and 8th International Conferences on Physics and Technology of Nanoheterostructure Microwave Electronics, Mokerov Readings 2017

Y2 - 24 May 2017

ER -

ID: 18816148