Standard

The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping. / Protasov, D. Yu; Gulyaev, D. V.; Bakarov, A. K. и др.

в: Journal of Physics: Conference Series, Том 864, № 1, 012051, 15.08.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Protasov, DY, Gulyaev, DV, Bakarov, AK, Toropov, AI & Zhuravlev, KS 2017, 'The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping', Journal of Physics: Conference Series, Том. 864, № 1, 012051. https://doi.org/10.1088/1742-6596/864/1/012051

APA

Protasov, D. Y., Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., & Zhuravlev, K. S. (2017). The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping. Journal of Physics: Conference Series, 864(1), [012051]. https://doi.org/10.1088/1742-6596/864/1/012051

Vancouver

Protasov DY, Gulyaev DV, Bakarov AK, Toropov AI, Zhuravlev KS. The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping. Journal of Physics: Conference Series. 2017 авг. 15;864(1):012051. doi: 10.1088/1742-6596/864/1/012051

Author

Protasov, D. Yu ; Gulyaev, D. V. ; Bakarov, A. K. и др. / The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping. в: Journal of Physics: Conference Series. 2017 ; Том 864, № 1.

BibTeX

@article{74f595872aea47fdaa8345728603fc4d,
title = "The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping",
abstract = "The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2 V-1 s-1 up to 6500 cm2 V-1 s-1 at the temperature of 300 K and 2DEG density of 4.0×1012 cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.",
author = "Protasov, {D. Yu} and Gulyaev, {D. V.} and Bakarov, {A. K.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",
year = "2017",
month = aug,
day = "15",
doi = "10.1088/1742-6596/864/1/012051",
language = "English",
volume = "864",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping

AU - Protasov, D. Yu

AU - Gulyaev, D. V.

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

PY - 2017/8/15

Y1 - 2017/8/15

N2 - The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2 V-1 s-1 up to 6500 cm2 V-1 s-1 at the temperature of 300 K and 2DEG density of 4.0×1012 cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.

AB - The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2 V-1 s-1 up to 6500 cm2 V-1 s-1 at the temperature of 300 K and 2DEG density of 4.0×1012 cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=85028764561&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012051

DO - 10.1088/1742-6596/864/1/012051

M3 - Article

AN - SCOPUS:85028764561

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012051

ER -

ID: 9561734