Research output: Contribution to journal › Article › peer-review
The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping. / Protasov, D. Yu; Gulyaev, D. V.; Bakarov, A. K. et al.
In: Journal of Physics: Conference Series, Vol. 864, No. 1, 012051, 15.08.2017.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - The 2DEG mobility enhancement for low- and high-electric fields in a new type of AlGaAs/InGaAs heterostructures with donor-acceptor doping
AU - Protasov, D. Yu
AU - Gulyaev, D. V.
AU - Bakarov, A. K.
AU - Toropov, A. I.
AU - Zhuravlev, K. S.
PY - 2017/8/15
Y1 - 2017/8/15
N2 - The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2 V-1 s-1 up to 6500 cm2 V-1 s-1 at the temperature of 300 K and 2DEG density of 4.0×1012 cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.
AB - The splitting of the delta-layers in the DA-pHEMT heterostructures has resulted in the increase of the spacer's effective thickness and growth of the low-field 2DEG mobility from 4000÷5000 cm2 V-1 s-1 up to 6500 cm2 V-1 s-1 at the temperature of 300 K and 2DEG density of 4.0×1012 cm-2. The 2DEG mobility in the δ-splitted DA-pHEMT heterostructures almost coincides with the mobility in standard pHEMT heterostructures, but the 2DEG density in the DA-pHEMT heterostructures is approximately twice higher. The additional potential barrier in the DA-pHEMT heterostructures formed by the acceptors causes the reduction of the real-space transfer effect. Therefore, the drift saturation velocity in these heterostructures is higher than the drift saturation velocity in standard pHEMT heterostructures.
UR - http://www.scopus.com/inward/record.url?scp=85028764561&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/864/1/012051
DO - 10.1088/1742-6596/864/1/012051
M3 - Article
AN - SCOPUS:85028764561
VL - 864
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012051
ER -
ID: 9561734