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Terahertz properties of Dirac fermions in HgTe films with optical doping. / Dziom, V.; Shuvaev, A.; Mikhailov, N. N. и др.

в: 2D Materials, Том 4, № 2, 024005, 01.06.2017.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Dziom, V, Shuvaev, A, Mikhailov, NN & Pimenov, A 2017, 'Terahertz properties of Dirac fermions in HgTe films with optical doping', 2D Materials, Том. 4, № 2, 024005. https://doi.org/10.1088/2053-1583/aa5cd7

APA

Dziom, V., Shuvaev, A., Mikhailov, N. N., & Pimenov, A. (2017). Terahertz properties of Dirac fermions in HgTe films with optical doping. 2D Materials, 4(2), [024005]. https://doi.org/10.1088/2053-1583/aa5cd7

Vancouver

Dziom V, Shuvaev A, Mikhailov NN, Pimenov A. Terahertz properties of Dirac fermions in HgTe films with optical doping. 2D Materials. 2017 июнь 1;4(2):024005. doi: 10.1088/2053-1583/aa5cd7

Author

Dziom, V. ; Shuvaev, A. ; Mikhailov, N. N. и др. / Terahertz properties of Dirac fermions in HgTe films with optical doping. в: 2D Materials. 2017 ; Том 4, № 2.

BibTeX

@article{71b11c6b0af74b4c98a86ae489a14634,
title = "Terahertz properties of Dirac fermions in HgTe films with optical doping",
abstract = "Terahertz properties of mercury telluride (HgTe) films with critical thickness are presented and discussed. The density of the charge carriers is controlled using contact-free optical doping by visible light. In the magneto-optical response of HgTe the contribution of two types of carriers (electrons and holes) can be identified. The density of the electrons can be modified by light illumination by more than one order of magnitude. As the hole density is roughly illumination-independent, the terahertz response of the illuminated samples becomes purely electronic. In some cases, light illumination may switch the qualitative electrodynamic response from hole-like to the electron-like. The cyclotron mass of the electrons could be extracted from the data and shows a square root dependence upon the charge concentration in the broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.",
keywords = "Cyclotron resonance, Dirac states, Magnetooptics, Terahertz spectroscopy, terahertz spectroscopy, cyclotron resonance, CYCLOTRON-RESONANCE, GAS, magnetooptics, QUANTUM-WELLS",
author = "V. Dziom and A. Shuvaev and Mikhailov, {N. N.} and A. Pimenov",
note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",
year = "2017",
month = jun,
day = "1",
doi = "10.1088/2053-1583/aa5cd7",
language = "English",
volume = "4",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "2",

}

RIS

TY - JOUR

T1 - Terahertz properties of Dirac fermions in HgTe films with optical doping

AU - Dziom, V.

AU - Shuvaev, A.

AU - Mikhailov, N. N.

AU - Pimenov, A.

N1 - Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - Terahertz properties of mercury telluride (HgTe) films with critical thickness are presented and discussed. The density of the charge carriers is controlled using contact-free optical doping by visible light. In the magneto-optical response of HgTe the contribution of two types of carriers (electrons and holes) can be identified. The density of the electrons can be modified by light illumination by more than one order of magnitude. As the hole density is roughly illumination-independent, the terahertz response of the illuminated samples becomes purely electronic. In some cases, light illumination may switch the qualitative electrodynamic response from hole-like to the electron-like. The cyclotron mass of the electrons could be extracted from the data and shows a square root dependence upon the charge concentration in the broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.

AB - Terahertz properties of mercury telluride (HgTe) films with critical thickness are presented and discussed. The density of the charge carriers is controlled using contact-free optical doping by visible light. In the magneto-optical response of HgTe the contribution of two types of carriers (electrons and holes) can be identified. The density of the electrons can be modified by light illumination by more than one order of magnitude. As the hole density is roughly illumination-independent, the terahertz response of the illuminated samples becomes purely electronic. In some cases, light illumination may switch the qualitative electrodynamic response from hole-like to the electron-like. The cyclotron mass of the electrons could be extracted from the data and shows a square root dependence upon the charge concentration in the broad range of parameters. This can be interpreted as a clear proof of a linear dispersion relations, i.e. Dirac-type charge carriers.

KW - Cyclotron resonance

KW - Dirac states

KW - Magnetooptics

KW - Terahertz spectroscopy

KW - terahertz spectroscopy

KW - cyclotron resonance

KW - CYCLOTRON-RESONANCE

KW - GAS

KW - magnetooptics

KW - QUANTUM-WELLS

UR - http://www.scopus.com/inward/record.url?scp=85021130133&partnerID=8YFLogxK

U2 - 10.1088/2053-1583/aa5cd7

DO - 10.1088/2053-1583/aa5cd7

M3 - Article

AN - SCOPUS:85021130133

VL - 4

JO - 2D Materials

JF - 2D Materials

SN - 2053-1583

IS - 2

M1 - 024005

ER -

ID: 9069992