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Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells. / Kozlov, D. V.; Rumyantsev, V. V.; Morozov, S. V. и др.

в: Journal of Experimental and Theoretical Physics, Том 127, № 6, 01.12.2018, стр. 1125-1129.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kozlov, DV, Rumyantsev, VV, Morozov, SV, Kadykov, AM, Fadeev, MA, Zholudev, MS, Varavin, VS, Mikhailov, NN, Dvoretskii, SA, Gavrilenko, VI & Teppe, F 2018, 'Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells', Journal of Experimental and Theoretical Physics, Том. 127, № 6, стр. 1125-1129. https://doi.org/10.1134/S1063776118100035

APA

Kozlov, D. V., Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Zholudev, M. S., Varavin, V. S., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., & Teppe, F. (2018). Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells. Journal of Experimental and Theoretical Physics, 127(6), 1125-1129. https://doi.org/10.1134/S1063776118100035

Vancouver

Kozlov DV, Rumyantsev VV, Morozov SV, Kadykov AM, Fadeev MA, Zholudev MS и др. Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells. Journal of Experimental and Theoretical Physics. 2018 дек. 1;127(6):1125-1129. doi: 10.1134/S1063776118100035

Author

Kozlov, D. V. ; Rumyantsev, V. V. ; Morozov, S. V. и др. / Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells. в: Journal of Experimental and Theoretical Physics. 2018 ; Том 127, № 6. стр. 1125-1129.

BibTeX

@article{4c620077a4e347ad9f93e62b3203e734,
title = "Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells",
abstract = "Abstract: The photoluminescence of bulky films and heterostructures with HgCdTe quantum wells is studied in the far IR range upon interband optical excitation. Photoluminescence lines are found whose position is independent of temperature, and intensity nonmonotonically changes with increasing temperature. These lines are shown to be related to the radiative recombination of holes by singly ionized mercury vacancies. A drastic increase in the equilibrium recombination of such centers involved in the formation of the photoluminescence signal with the temperature change from 40 to 70 K leads to the nonmonotonic temperature dependence of the photoluminescence intensity.",
keywords = "MOLECULAR-BEAM EPITAXY, IMPURITY, STATES, GROWTH",
author = "Kozlov, {D. V.} and Rumyantsev, {V. V.} and Morozov, {S. V.} and Kadykov, {A. M.} and Fadeev, {M. A.} and Zholudev, {M. S.} and Varavin, {V. S.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Gavrilenko, {V. I.} and F. Teppe",
year = "2018",
month = dec,
day = "1",
doi = "10.1134/S1063776118100035",
language = "English",
volume = "127",
pages = "1125--1129",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells

AU - Kozlov, D. V.

AU - Rumyantsev, V. V.

AU - Morozov, S. V.

AU - Kadykov, A. M.

AU - Fadeev, M. A.

AU - Zholudev, M. S.

AU - Varavin, V. S.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Gavrilenko, V. I.

AU - Teppe, F.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: The photoluminescence of bulky films and heterostructures with HgCdTe quantum wells is studied in the far IR range upon interband optical excitation. Photoluminescence lines are found whose position is independent of temperature, and intensity nonmonotonically changes with increasing temperature. These lines are shown to be related to the radiative recombination of holes by singly ionized mercury vacancies. A drastic increase in the equilibrium recombination of such centers involved in the formation of the photoluminescence signal with the temperature change from 40 to 70 K leads to the nonmonotonic temperature dependence of the photoluminescence intensity.

AB - Abstract: The photoluminescence of bulky films and heterostructures with HgCdTe quantum wells is studied in the far IR range upon interband optical excitation. Photoluminescence lines are found whose position is independent of temperature, and intensity nonmonotonically changes with increasing temperature. These lines are shown to be related to the radiative recombination of holes by singly ionized mercury vacancies. A drastic increase in the equilibrium recombination of such centers involved in the formation of the photoluminescence signal with the temperature change from 40 to 70 K leads to the nonmonotonic temperature dependence of the photoluminescence intensity.

KW - MOLECULAR-BEAM EPITAXY

KW - IMPURITY

KW - STATES

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85061975814&partnerID=8YFLogxK

U2 - 10.1134/S1063776118100035

DO - 10.1134/S1063776118100035

M3 - Article

AN - SCOPUS:85061975814

VL - 127

SP - 1125

EP - 1129

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 6

ER -

ID: 18622627