TY - JOUR

T1 - Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

AU - Novikova, N. N.

AU - Yakovlev, V. A.

AU - Klimin, S. A.

AU - Malin, T. V.

AU - Gilinsky, A. M.

AU - Zhuravlev, K. S.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

AB - Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

KW - aluminum and gallium nitrides

KW - reflection and ATR spectroscopy

KW - surface polaritons

KW - VIBRATIONS

UR - http://www.scopus.com/inward/record.url?scp=85070857427&partnerID=8YFLogxK

U2 - 10.1134/S0030400X19070208

DO - 10.1134/S0030400X19070208

M3 - Article

AN - SCOPUS:85070857427

VL - 127

SP - 36

EP - 39

JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

SN - 0030-400X

IS - 1

ER -