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Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion : In Films in the Vicinity of a Band Inversion. / Klimov, A. E.; Akimov, A. N.; Akhundov, I. O. и др.

в: Semiconductors, Том 53, № 9, 01.09.2019, стр. 1182-1186.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Klimov, AE, Akimov, AN, Akhundov, IO, Golyashov, VA, Gorshkov, DV, Ishchenko, DV, Sidorov, GY, Suprun, SP, Tarasov, AS, Epov, VS & Tereshchenko, OE 2019, 'Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion', Semiconductors, Том. 53, № 9, стр. 1182-1186. https://doi.org/10.1134/S1063782619090094

APA

Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Y., Suprun, S. P., Tarasov, A. S., Epov, V. S., & Tereshchenko, O. E. (2019). Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion. Semiconductors, 53(9), 1182-1186. https://doi.org/10.1134/S1063782619090094

Vancouver

Klimov AE, Akimov AN, Akhundov IO, Golyashov VA, Gorshkov DV, Ishchenko DV и др. Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion. Semiconductors. 2019 сент. 1;53(9):1182-1186. doi: 10.1134/S1063782619090094

Author

Klimov, A. E. ; Akimov, A. N. ; Akhundov, I. O. и др. / Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion : In Films in the Vicinity of a Band Inversion. в: Semiconductors. 2019 ; Том 53, № 9. стр. 1182-1186.

BibTeX

@article{15ba88774af24a11af90fb6938476cc0,
title = "Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion: In Films in the Vicinity of a Band Inversion",
abstract = "The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.",
keywords = "field effect, MIS structure, PbSnTe:In solid solution, surface conductivity, PbSnTe, In solid solution",
author = "Klimov, {A. E.} and Akimov, {A. N.} and Akhundov, {I. O.} and Golyashov, {V. A.} and Gorshkov, {D. V.} and Ishchenko, {D. V.} and Sidorov, {G. Yu} and Suprun, {S. P.} and Tarasov, {A. S.} and Epov, {V. S.} and Tereshchenko, {O. E.}",
year = "2019",
month = sep,
day = "1",
doi = "10.1134/S1063782619090094",
language = "English",
volume = "53",
pages = "1182--1186",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion

T2 - In Films in the Vicinity of a Band Inversion

AU - Klimov, A. E.

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Golyashov, V. A.

AU - Gorshkov, D. V.

AU - Ishchenko, D. V.

AU - Sidorov, G. Yu

AU - Suprun, S. P.

AU - Tarasov, A. S.

AU - Epov, V. S.

AU - Tereshchenko, O. E.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.

AB - The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10(5) are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al2O3 layer.

KW - field effect

KW - MIS structure

KW - PbSnTe:In solid solution

KW - surface conductivity

KW - PbSnTe

KW - In solid solution

UR - http://www.scopus.com/inward/record.url?scp=85071854034&partnerID=8YFLogxK

U2 - 10.1134/S1063782619090094

DO - 10.1134/S1063782619090094

M3 - Article

AN - SCOPUS:85071854034

VL - 53

SP - 1182

EP - 1186

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 21450879