TY - JOUR

T1 - Surface morphology analysis of CdTe buffer layers using ellipsometry and interference profilometry to create a technique for monitoring the growth of buffer layers

AU - Shvets, Vasily A.

AU - Marin, Denis V.

AU - Kuznetsova, Lada S.

AU - Azarov, Ivan A.

AU - Yakushev, Maxim V.

AU - Rykhlitskii, Sergey V.

N1 - Ministry of Science and Higher Education of the Russian Federation (075-15-2020-797 (13.1902.21.0024)).

PY - 2024/7/20

Y1 - 2024/7/20

N2 - Subject of study. An alternative substrate for the growth of a mercury-cadmium-telluride ternary compound is studied, which consists of silicon with CdTe and ZnTe layers deposited on it. Aim of study. The aim is the construction of a model of the rough surface of CdTe films to create a technique for quality control of the growing structures. Method. Non-destructive methods with sufficient resolution are required as roughness measurement techniques. These conditions are satisfied by optical research methods. In this work, ellipsometry and interference profilometry were used. Main results. The roughness of CdTe films was studied using ellipsometry and interference profilometry. It is shown that these two methods perfectly complement each other and provide a more complete picture of the profile surface than each one separately. A two-scale model of the rough surface of CdTe buffer layers representing a slightly wavy surface with a small-scale relief superimposed on it has been constructed. It is shown that the ellipsometric measurements are affected by the small-scale relief. This result was used to develop a technique for controlling the process of epitaxial growth of buffer layers. Practical significance. The results of studying the surface roughness of CdTe films obtained in this work serve as the basis for the development of methods for controlling the parameters of CdTe layers suitable for growing high-quality photosensitive structures.

AB - Subject of study. An alternative substrate for the growth of a mercury-cadmium-telluride ternary compound is studied, which consists of silicon with CdTe and ZnTe layers deposited on it. Aim of study. The aim is the construction of a model of the rough surface of CdTe films to create a technique for quality control of the growing structures. Method. Non-destructive methods with sufficient resolution are required as roughness measurement techniques. These conditions are satisfied by optical research methods. In this work, ellipsometry and interference profilometry were used. Main results. The roughness of CdTe films was studied using ellipsometry and interference profilometry. It is shown that these two methods perfectly complement each other and provide a more complete picture of the profile surface than each one separately. A two-scale model of the rough surface of CdTe buffer layers representing a slightly wavy surface with a small-scale relief superimposed on it has been constructed. It is shown that the ellipsometric measurements are affected by the small-scale relief. This result was used to develop a technique for controlling the process of epitaxial growth of buffer layers. Practical significance. The results of studying the surface roughness of CdTe films obtained in this work serve as the basis for the development of methods for controlling the parameters of CdTe layers suitable for growing high-quality photosensitive structures.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001267515000006

UR - https://www.mendeley.com/catalogue/4ac48741-8976-30a6-b8ad-9cdcb421f434/

U2 - 10.1364/jot.91.000091

DO - 10.1364/jot.91.000091

M3 - Article

VL - 91

SP - 91

EP - 95

JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

SN - 1070-9762

IS - 2

ER -