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Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films. / Tarasov, A. S.; Ishchenko, D. V.; Akhundov, I. O. и др.

в: Applied Surface Science, Том 569, 150930, 15.12.2021.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Tarasov, AS, Ishchenko, DV, Akhundov, IO, Golyashov, VA, Klimov, AE, Suprun, SP, Fedosenko, EV, Sherstyakova, VN, Rybkin, AG, Vilkov, OY & Tereshchenko, OE 2021, 'Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films', Applied Surface Science, Том. 569, 150930. https://doi.org/10.1016/j.apsusc.2021.150930

APA

Tarasov, A. S., Ishchenko, D. V., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Suprun, S. P., Fedosenko, E. V., Sherstyakova, V. N., Rybkin, A. G., Vilkov, O. Y., & Tereshchenko, O. E. (2021). Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films. Applied Surface Science, 569, [150930]. https://doi.org/10.1016/j.apsusc.2021.150930

Vancouver

Tarasov AS, Ishchenko DV, Akhundov IO, Golyashov VA, Klimov AE, Suprun SP и др. Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films. Applied Surface Science. 2021 дек. 15;569:150930. doi: 10.1016/j.apsusc.2021.150930

Author

Tarasov, A. S. ; Ishchenko, D. V. ; Akhundov, I. O. и др. / Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films. в: Applied Surface Science. 2021 ; Том 569.

BibTeX

@article{ff90f69bdef64fbb8df01443294ac29e,
title = "Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films",
abstract = "In present work, the effect of Pb1-xSnxTe < In> (1 1 1) surface chemical treatment on electrophysical and optical properties was studied. It was shown that treatment of Pb1-xSnxTe < In> (1 1 1) surface in HCl-isopropanol (HCl-iPA) solution led to removal of native oxides and surface enrichment by elemental tellurium of several nm thickness. Subsequent anneals in vacuum led to desorption of elemental tellurium and revealing (1x1) surface structure. We present angle resolved photoemission spectroscopy (ARPES) measurements of the surface states on chemically prepared (1 1 1) oriented MBE-grown films of Pb1-xSnxTe, a three-dimensional topological crystalline insulator (TCI). The surface states with Dirac-like dispersion at Γ in the surface Brillouin zone were detected. The dark current and photocurrent were found in strong dependence on the surface chemical procedure and composition. The relative simplicity of the preparation technique is encouraging, and suggests a clear path for future investigations of TCI states on alternative surface orientations in (Pb,Sn)Te solid solutions and applied aspects of TCI research.",
keywords = "Electronic structure, MBE, Photoemission, Surface treatment, Topological crystalline insulator",
author = "Tarasov, {A. S.} and Ishchenko, {D. V.} and Akhundov, {I. O.} and Golyashov, {V. A.} and Klimov, {A. E.} and Suprun, {S. P.} and Fedosenko, {E. V.} and Sherstyakova, {V. N.} and Rybkin, {A. G.} and Vilkov, {O. Yu} and Tereshchenko, {O. E.}",
note = "Funding Information: The authors would like to thank B.M. Kuchumov, N.S. Pashchin, and E.L. Molodtsova for their kind help in conducting experiments. This work was supported by the Ministry of Education (project # 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",
year = "2021",
month = dec,
day = "15",
doi = "10.1016/j.apsusc.2021.150930",
language = "English",
volume = "569",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films

AU - Tarasov, A. S.

AU - Ishchenko, D. V.

AU - Akhundov, I. O.

AU - Golyashov, V. A.

AU - Klimov, A. E.

AU - Suprun, S. P.

AU - Fedosenko, E. V.

AU - Sherstyakova, V. N.

AU - Rybkin, A. G.

AU - Vilkov, O. Yu

AU - Tereshchenko, O. E.

N1 - Funding Information: The authors would like to thank B.M. Kuchumov, N.S. Pashchin, and E.L. Molodtsova for their kind help in conducting experiments. This work was supported by the Ministry of Education (project # 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/12/15

Y1 - 2021/12/15

N2 - In present work, the effect of Pb1-xSnxTe < In> (1 1 1) surface chemical treatment on electrophysical and optical properties was studied. It was shown that treatment of Pb1-xSnxTe < In> (1 1 1) surface in HCl-isopropanol (HCl-iPA) solution led to removal of native oxides and surface enrichment by elemental tellurium of several nm thickness. Subsequent anneals in vacuum led to desorption of elemental tellurium and revealing (1x1) surface structure. We present angle resolved photoemission spectroscopy (ARPES) measurements of the surface states on chemically prepared (1 1 1) oriented MBE-grown films of Pb1-xSnxTe, a three-dimensional topological crystalline insulator (TCI). The surface states with Dirac-like dispersion at Γ in the surface Brillouin zone were detected. The dark current and photocurrent were found in strong dependence on the surface chemical procedure and composition. The relative simplicity of the preparation technique is encouraging, and suggests a clear path for future investigations of TCI states on alternative surface orientations in (Pb,Sn)Te solid solutions and applied aspects of TCI research.

AB - In present work, the effect of Pb1-xSnxTe < In> (1 1 1) surface chemical treatment on electrophysical and optical properties was studied. It was shown that treatment of Pb1-xSnxTe < In> (1 1 1) surface in HCl-isopropanol (HCl-iPA) solution led to removal of native oxides and surface enrichment by elemental tellurium of several nm thickness. Subsequent anneals in vacuum led to desorption of elemental tellurium and revealing (1x1) surface structure. We present angle resolved photoemission spectroscopy (ARPES) measurements of the surface states on chemically prepared (1 1 1) oriented MBE-grown films of Pb1-xSnxTe, a three-dimensional topological crystalline insulator (TCI). The surface states with Dirac-like dispersion at Γ in the surface Brillouin zone were detected. The dark current and photocurrent were found in strong dependence on the surface chemical procedure and composition. The relative simplicity of the preparation technique is encouraging, and suggests a clear path for future investigations of TCI states on alternative surface orientations in (Pb,Sn)Te solid solutions and applied aspects of TCI research.

KW - Electronic structure

KW - MBE

KW - Photoemission

KW - Surface treatment

KW - Topological crystalline insulator

UR - http://www.scopus.com/inward/record.url?scp=85113409391&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2021.150930

DO - 10.1016/j.apsusc.2021.150930

M3 - Article

AN - SCOPUS:85113409391

VL - 569

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 150930

ER -

ID: 34082558