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Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films. / Tarasov, A. S.; Ishchenko, D. V.; Akhundov, I. O. et al.
In: Applied Surface Science, Vol. 569, 150930, 15.12.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Surface chemical treatment effect on (1 1 1) PbSnTe < In > Topological crystalline insulator films
AU - Tarasov, A. S.
AU - Ishchenko, D. V.
AU - Akhundov, I. O.
AU - Golyashov, V. A.
AU - Klimov, A. E.
AU - Suprun, S. P.
AU - Fedosenko, E. V.
AU - Sherstyakova, V. N.
AU - Rybkin, A. G.
AU - Vilkov, O. Yu
AU - Tereshchenko, O. E.
N1 - Funding Information: The authors would like to thank B.M. Kuchumov, N.S. Pashchin, and E.L. Molodtsova for their kind help in conducting experiments. This work was supported by the Ministry of Education (project # 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021 Elsevier B.V.
PY - 2021/12/15
Y1 - 2021/12/15
N2 - In present work, the effect of Pb1-xSnxTe < In> (1 1 1) surface chemical treatment on electrophysical and optical properties was studied. It was shown that treatment of Pb1-xSnxTe < In> (1 1 1) surface in HCl-isopropanol (HCl-iPA) solution led to removal of native oxides and surface enrichment by elemental tellurium of several nm thickness. Subsequent anneals in vacuum led to desorption of elemental tellurium and revealing (1x1) surface structure. We present angle resolved photoemission spectroscopy (ARPES) measurements of the surface states on chemically prepared (1 1 1) oriented MBE-grown films of Pb1-xSnxTe, a three-dimensional topological crystalline insulator (TCI). The surface states with Dirac-like dispersion at Γ in the surface Brillouin zone were detected. The dark current and photocurrent were found in strong dependence on the surface chemical procedure and composition. The relative simplicity of the preparation technique is encouraging, and suggests a clear path for future investigations of TCI states on alternative surface orientations in (Pb,Sn)Te solid solutions and applied aspects of TCI research.
AB - In present work, the effect of Pb1-xSnxTe < In> (1 1 1) surface chemical treatment on electrophysical and optical properties was studied. It was shown that treatment of Pb1-xSnxTe < In> (1 1 1) surface in HCl-isopropanol (HCl-iPA) solution led to removal of native oxides and surface enrichment by elemental tellurium of several nm thickness. Subsequent anneals in vacuum led to desorption of elemental tellurium and revealing (1x1) surface structure. We present angle resolved photoemission spectroscopy (ARPES) measurements of the surface states on chemically prepared (1 1 1) oriented MBE-grown films of Pb1-xSnxTe, a three-dimensional topological crystalline insulator (TCI). The surface states with Dirac-like dispersion at Γ in the surface Brillouin zone were detected. The dark current and photocurrent were found in strong dependence on the surface chemical procedure and composition. The relative simplicity of the preparation technique is encouraging, and suggests a clear path for future investigations of TCI states on alternative surface orientations in (Pb,Sn)Te solid solutions and applied aspects of TCI research.
KW - Electronic structure
KW - MBE
KW - Photoemission
KW - Surface treatment
KW - Topological crystalline insulator
UR - http://www.scopus.com/inward/record.url?scp=85113409391&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2021.150930
DO - 10.1016/j.apsusc.2021.150930
M3 - Article
AN - SCOPUS:85113409391
VL - 569
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
M1 - 150930
ER -
ID: 34082558