Standard

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. / Smagina, Zh V.; Zinovyev, V. A.; Krivyakin, G. K. и др.

в: Semiconductors, Том 52, № 9, 01.09.2018, стр. 1150-1155.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Smagina, ZV, Zinovyev, VA, Krivyakin, GK, Rodyakina, EE, Kuchinskaya, PA, Fomin, BI, Yablonskiy, AN, Stepikhova, MV, Novikov, AV & Dvurechenskii, AV 2018, 'Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface', Semiconductors, Том. 52, № 9, стр. 1150-1155. https://doi.org/10.1134/S1063782618090191

APA

Smagina, Z. V., Zinovyev, V. A., Krivyakin, G. K., Rodyakina, E. E., Kuchinskaya, P. A., Fomin, B. I., Yablonskiy, A. N., Stepikhova, M. V., Novikov, A. V., & Dvurechenskii, A. V. (2018). Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. Semiconductors, 52(9), 1150-1155. https://doi.org/10.1134/S1063782618090191

Vancouver

Smagina ZV, Zinovyev VA, Krivyakin GK, Rodyakina EE, Kuchinskaya PA, Fomin BI и др. Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. Semiconductors. 2018 сент. 1;52(9):1150-1155. doi: 10.1134/S1063782618090191

Author

Smagina, Zh V. ; Zinovyev, V. A. ; Krivyakin, G. K. и др. / Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. в: Semiconductors. 2018 ; Том 52, № 9. стр. 1150-1155.

BibTeX

@article{68e539097ede4c1e877e0dde386f0e31,
title = "Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface",
abstract = "Abstract: A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.",
keywords = "SILICON",
author = "Smagina, {Zh V.} and Zinovyev, {V. A.} and Krivyakin, {G. K.} and Rodyakina, {E. E.} and Kuchinskaya, {P. A.} and Fomin, {B. I.} and Yablonskiy, {A. N.} and Stepikhova, {M. V.} and Novikov, {A. V.} and Dvurechenskii, {A. V.}",
year = "2018",
month = sep,
day = "1",
doi = "10.1134/S1063782618090191",
language = "English",
volume = "52",
pages = "1150--1155",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

AU - Smagina, Zh V.

AU - Zinovyev, V. A.

AU - Krivyakin, G. K.

AU - Rodyakina, E. E.

AU - Kuchinskaya, P. A.

AU - Fomin, B. I.

AU - Yablonskiy, A. N.

AU - Stepikhova, M. V.

AU - Novikov, A. V.

AU - Dvurechenskii, A. V.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Abstract: A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.

AB - Abstract: A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.

KW - SILICON

UR - http://www.scopus.com/inward/record.url?scp=85052139524&partnerID=8YFLogxK

U2 - 10.1134/S1063782618090191

DO - 10.1134/S1063782618090191

M3 - Article

AN - SCOPUS:85052139524

VL - 52

SP - 1150

EP - 1155

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 16242389