Research output: Contribution to journal › Article › peer-review
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface. / Smagina, Zh V.; Zinovyev, V. A.; Krivyakin, G. K. et al.
In: Semiconductors, Vol. 52, No. 9, 01.09.2018, p. 1150-1155.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
AU - Smagina, Zh V.
AU - Zinovyev, V. A.
AU - Krivyakin, G. K.
AU - Rodyakina, E. E.
AU - Kuchinskaya, P. A.
AU - Fomin, B. I.
AU - Yablonskiy, A. N.
AU - Stepikhova, M. V.
AU - Novikov, A. V.
AU - Dvurechenskii, A. V.
PY - 2018/9/1
Y1 - 2018/9/1
N2 - Abstract: A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.
AB - Abstract: A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.
KW - SILICON
UR - http://www.scopus.com/inward/record.url?scp=85052139524&partnerID=8YFLogxK
U2 - 10.1134/S1063782618090191
DO - 10.1134/S1063782618090191
M3 - Article
AN - SCOPUS:85052139524
VL - 52
SP - 1150
EP - 1155
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 9
ER -
ID: 16242389