Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds. / Timofeev, Vyacheslav A.; Mashanov, Vladimir I.; Nikiforov, Alexandr I. и др.
в: Applied Surface Science, Том 573, 151615, 30.01.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds
AU - Timofeev, Vyacheslav A.
AU - Mashanov, Vladimir I.
AU - Nikiforov, Alexandr I.
AU - Loshkarev, Ivan D.
AU - Gulyaev, Dmitry V.
AU - Volodin, Vladimir A.
AU - Kozhukhov, Anton S.
AU - Komkov, Oleg S.
AU - Firsov, Dmitry D.
AU - Korolkov, Ilya V.
N1 - Funding Information: This work was supported by the Ministry of Science and Higher Education of the Russian Federation (Grant No. 075-15-2020-797 (13.1902.21.0024)). The SEM and AFM studies were carried out using the equipment of CCP “Nanostructures”. Publisher Copyright: © 2021 Elsevier B.V.
PY - 2022/1/30
Y1 - 2022/1/30
N2 - The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp decrease in photoluminescence. It is associated with the phase transition of SnO to SnO2. Two approaches were proposed for obtaining the dual-band material based on tin oxides and GeSiSn compounds. Using the Sn-rich nanoislands grown on the vapor–liquid-solid (VLS) mechanism, the nanoislands having SnO(x) in their upper part, and the SiSn solid solution under SnO(x) were obtained after annealing. Furthermore, the growth technology of the dual-band material, which included tin oxides on top of a GeSiSn/Si multiple quantum well (MQW) structure, was developed. Tin oxides demonstrated the photoluminescence signal in the visible region, whereas the SiSn solid solution in nanoislands and GeSiSn/Si multiple quantum well structure showed the photoluminescence signal in the infrared range.
AB - The phase transitions during the oxidation of polycrystalline tin (β-Sn) were studied. The intense photoluminescence from SnO was observed in the annealing temperature range of 300–400 °C. An increase in the annealing temperature led to a sharp decrease in photoluminescence. It is associated with the phase transition of SnO to SnO2. Two approaches were proposed for obtaining the dual-band material based on tin oxides and GeSiSn compounds. Using the Sn-rich nanoislands grown on the vapor–liquid-solid (VLS) mechanism, the nanoislands having SnO(x) in their upper part, and the SiSn solid solution under SnO(x) were obtained after annealing. Furthermore, the growth technology of the dual-band material, which included tin oxides on top of a GeSiSn/Si multiple quantum well (MQW) structure, was developed. Tin oxides demonstrated the photoluminescence signal in the visible region, whereas the SiSn solid solution in nanoislands and GeSiSn/Si multiple quantum well structure showed the photoluminescence signal in the infrared range.
KW - Dual-band material
KW - Photoluminescence
KW - Raman spectroscopy
KW - Solid solution
KW - Tin oxide
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=85122510808&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2021.151615
DO - 10.1016/j.apsusc.2021.151615
M3 - Article
AN - SCOPUS:85122510808
VL - 573
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
M1 - 151615
ER -
ID: 35175911