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Structure of Germanium Monoxide Thin Films. / Astankova, K. N.; Volodin, V. A.; Azarov, I. A.

в: Semiconductors, Том 54, № 12, 12.2020, стр. 1555-1560.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Astankova, KN, Volodin, VA & Azarov, IA 2020, 'Structure of Germanium Monoxide Thin Films', Semiconductors, Том. 54, № 12, стр. 1555-1560. https://doi.org/10.1134/S1063782620120027

APA

Astankova, K. N., Volodin, V. A., & Azarov, I. A. (2020). Structure of Germanium Monoxide Thin Films. Semiconductors, 54(12), 1555-1560. https://doi.org/10.1134/S1063782620120027

Vancouver

Astankova KN, Volodin VA, Azarov IA. Structure of Germanium Monoxide Thin Films. Semiconductors. 2020 дек.;54(12):1555-1560. doi: 10.1134/S1063782620120027

Author

Astankova, K. N. ; Volodin, V. A. ; Azarov, I. A. / Structure of Germanium Monoxide Thin Films. в: Semiconductors. 2020 ; Том 54, № 12. стр. 1555-1560.

BibTeX

@article{5430fe5a3fda44ebb26d259429d87987,
title = "Structure of Germanium Monoxide Thin Films",
abstract = "By optical methods (Raman spectroscopy, infrared spectroscopy, X-ray photoelectron spectroscopy) and electron-microscopy techniques, it was found that the atomic structure of germanium monoxide films of stoichiometric composition corresponds to the random bonding model and does not contain germanium nanoclusters. This structure is metastable and transforms into a random mixture structure at a temperature of 260°C and higher. The metastability of solid GeO can be caused by internal strains in the atomic network.",
keywords = "germanium monoxide, metastability, random bonding model, PHOTOLUMINESCENCE",
author = "Astankova, {K. N.} and Volodin, {V. A.} and Azarov, {I. A.}",
note = "Funding Information: We thank A.G. Cherkov for conducting high-resolution TEM studies and I.P. Prosvirin for recording the XPS spectra of the GeO film. The study was carried out in part with the use of equipment of the Collective Use Center ?Nanostructures?, Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, and the Collective Use Center ?High Technologies and Analytics of Nanosystems?, Novosibirsk State University. Funding Information: The part of the study concerned with XPS measurements was supported by the Russian Science Foundation, project no. 18-49-08001. The part of the study concerned with Raman spectroscopy was supported by the Ministry of Education and Science of the Russian Federation, project no. 2020-1902-01-058. Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = dec,
doi = "10.1134/S1063782620120027",
language = "English",
volume = "54",
pages = "1555--1560",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "12",

}

RIS

TY - JOUR

T1 - Structure of Germanium Monoxide Thin Films

AU - Astankova, K. N.

AU - Volodin, V. A.

AU - Azarov, I. A.

N1 - Funding Information: We thank A.G. Cherkov for conducting high-resolution TEM studies and I.P. Prosvirin for recording the XPS spectra of the GeO film. The study was carried out in part with the use of equipment of the Collective Use Center ?Nanostructures?, Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, and the Collective Use Center ?High Technologies and Analytics of Nanosystems?, Novosibirsk State University. Funding Information: The part of the study concerned with XPS measurements was supported by the Russian Science Foundation, project no. 18-49-08001. The part of the study concerned with Raman spectroscopy was supported by the Ministry of Education and Science of the Russian Federation, project no. 2020-1902-01-058. Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12

Y1 - 2020/12

N2 - By optical methods (Raman spectroscopy, infrared spectroscopy, X-ray photoelectron spectroscopy) and electron-microscopy techniques, it was found that the atomic structure of germanium monoxide films of stoichiometric composition corresponds to the random bonding model and does not contain germanium nanoclusters. This structure is metastable and transforms into a random mixture structure at a temperature of 260°C and higher. The metastability of solid GeO can be caused by internal strains in the atomic network.

AB - By optical methods (Raman spectroscopy, infrared spectroscopy, X-ray photoelectron spectroscopy) and electron-microscopy techniques, it was found that the atomic structure of germanium monoxide films of stoichiometric composition corresponds to the random bonding model and does not contain germanium nanoclusters. This structure is metastable and transforms into a random mixture structure at a temperature of 260°C and higher. The metastability of solid GeO can be caused by internal strains in the atomic network.

KW - germanium monoxide

KW - metastability

KW - random bonding model

KW - PHOTOLUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85097048336&partnerID=8YFLogxK

U2 - 10.1134/S1063782620120027

DO - 10.1134/S1063782620120027

M3 - Article

AN - SCOPUS:85097048336

VL - 54

SP - 1555

EP - 1560

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 26204921