Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices. / Tyschenko, I. E.; Zhang, R.
в: Semiconductors, Том 55, № 1, 11, 01.2021, стр. 76-85.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices
AU - Tyschenko, I. E.
AU - Zhang, R.
N1 - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment 0306-2019-0005. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.
PY - 2021/1
Y1 - 2021/1
N2 - Abstract: Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.
AB - Abstract: Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.
KW - InSb
KW - nanocrystals
KW - silicon
KW - silicon oxide
KW - synthesis
UR - http://www.scopus.com/inward/record.url?scp=85100414326&partnerID=8YFLogxK
UR - https://www.elibrary.ru/item.asp?id=44956793
U2 - 10.1134/S1063782621010188
DO - 10.1134/S1063782621010188
M3 - Article
AN - SCOPUS:85100414326
VL - 55
SP - 76
EP - 85
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 1
M1 - 11
ER -
ID: 34210876