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Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices. / Tyschenko, I. E.; Zhang, R.

In: Semiconductors, Vol. 55, No. 1, 11, 01.2021, p. 76-85.

Research output: Contribution to journal › Article › peer-review

Harvard

Tyschenko, IE & Zhang, R 2021, 'Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices', Semiconductors, vol. 55, no. 1, 11, pp. 76-85. https://doi.org/10.1134/S1063782621010188

APA

Tyschenko, I. E., & Zhang, R. (2021). Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices. Semiconductors, 55(1), 76-85. [11]. https://doi.org/10.1134/S1063782621010188

Vancouver

Tyschenko IE, Zhang R. Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices. Semiconductors. 2021 Jan;55(1):76-85. 11. doi: 10.1134/S1063782621010188

Author

Tyschenko, I. E. ; Zhang, R. / Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices. In: Semiconductors. 2021 ; Vol. 55, No. 1. pp. 76-85.

BibTeX

@article{97c2993a5c914a05bc23a6428b62170a,
title = "Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices",
abstract = "Abstract: Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.",
keywords = "InSb, nanocrystals, silicon, silicon oxide, synthesis",
author = "Tyschenko, {I. E.} and R. Zhang",
note = "This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment 0306-2019-0005. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = jan,
doi = "10.1134/S1063782621010188",
language = "English",
volume = "55",
pages = "76--85",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "1",

}

RIS

TY - JOUR

T1 - Structural and Optical-Phonon Properties of InSb Nanocrystals Synthesized in Si and SiO2 Matrices

AU - Tyschenko, I. E.

AU - Zhang, R.

N1 - This study was supported by the Ministry of Science and Higher Education of the Russian Federation, state assignment 0306-2019-0005. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/1

Y1 - 2021/1

N2 - Abstract: Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.

AB - Abstract: Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals formed in SiO2 layers by ion-beam synthesis and rf magnetron sputtering are compared. The properties of optical phonons in InSb nanocrystals are explained in terms of the effect of the structural properties of the surrounding matrix.

KW - InSb

KW - nanocrystals

KW - silicon

KW - silicon oxide

KW - synthesis

UR - http://www.scopus.com/inward/record.url?scp=85100414326&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=44956793

U2 - 10.1134/S1063782621010188

DO - 10.1134/S1063782621010188

M3 - Article

AN - SCOPUS:85100414326

VL - 55

SP - 76

EP - 85

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

M1 - 11

ER -

ID: 34210876