Strain in Ultrathin SiGeSn Layers in a Silicon Matrix › Обзор исследований

Standard

Strain in Ultrathin SiGeSn Layers in a Silicon Matrix. / Gutakovskii, A. K.; Talochkin, A. B.

в: JETP Letters, Том 106, № 12, 01.12.2017, стр. 780-784.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gutakovskii, AK & Talochkin, AB 2017, 'Strain in Ultrathin SiGeSn Layers in a Silicon Matrix', JETP Letters, Том. 106, № 12, стр. 780-784. https://doi.org/10.1134/S0021364017240092

APA

Gutakovskii, A. K., & Talochkin, A. B. (2017). Strain in Ultrathin SiGeSn Layers in a Silicon Matrix. JETP Letters, 106(12), 780-784. https://doi.org/10.1134/S0021364017240092

Vancouver

Gutakovskii AK, Talochkin AB. Strain in Ultrathin SiGeSn Layers in a Silicon Matrix. JETP Letters. 2017 дек. 1;106(12):780-784. doi: 10.1134/S0021364017240092

Author

Gutakovskii, A. K. ; Talochkin, A. B. / Strain in Ultrathin SiGeSn Layers in a Silicon Matrix. в: JETP Letters. 2017 ; Том 106, № 12. стр. 780-784.

BibTeX

@article{f4f99bea6dcd4779863693c9d87d03d3,

title = "Strain in Ultrathin SiGeSn Layers in a Silicon Matrix",

abstract = "Strain in SiGeSn alloy layers with thicknesses of d = 1.5 and 2.0 nm grown in a Si matrix by molecular-beam epitaxy is investigated using the geometric-phase analysis of high-resolution electron microscopy images. The layer thickness is comparable to the spatial resolution of the method (Δ ~ 1 nm), which leads to a considerable distortion of the strain distribution profile and an error in determining the strain value. A correction to the measured strain making it closer to the true value is obtained by comparing the shapes of the observed and real strain distributions in the investigated layers. The correction is determined by the Δ/d ratio. The found strain values are in good agreement with the calculations for pseudomorphic layers in the model of a rigid substrate.",

keywords = "DEVICES",

author = "Gutakovskii, {A. K.} and Talochkin, {A. B.}",

note = "Publisher Copyright: {\textcopyright} 2017, Pleiades Publishing, Inc.",

year = "2017",

month = dec,

day = "1",

doi = "10.1134/S0021364017240092",

language = "English",

volume = "106",

pages = "780--784",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",

number = "12",

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RIS

TY - JOUR

T1 - Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

AU - Gutakovskii, A. K.

AU - Talochkin, A. B.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Strain in SiGeSn alloy layers with thicknesses of d = 1.5 and 2.0 nm grown in a Si matrix by molecular-beam epitaxy is investigated using the geometric-phase analysis of high-resolution electron microscopy images. The layer thickness is comparable to the spatial resolution of the method (Δ ~ 1 nm), which leads to a considerable distortion of the strain distribution profile and an error in determining the strain value. A correction to the measured strain making it closer to the true value is obtained by comparing the shapes of the observed and real strain distributions in the investigated layers. The correction is determined by the Δ/d ratio. The found strain values are in good agreement with the calculations for pseudomorphic layers in the model of a rigid substrate.

AB - Strain in SiGeSn alloy layers with thicknesses of d = 1.5 and 2.0 nm grown in a Si matrix by molecular-beam epitaxy is investigated using the geometric-phase analysis of high-resolution electron microscopy images. The layer thickness is comparable to the spatial resolution of the method (Δ ~ 1 nm), which leads to a considerable distortion of the strain distribution profile and an error in determining the strain value. A correction to the measured strain making it closer to the true value is obtained by comparing the shapes of the observed and real strain distributions in the investigated layers. The correction is determined by the Δ/d ratio. The found strain values are in good agreement with the calculations for pseudomorphic layers in the model of a rigid substrate.

KW - DEVICES

UR - http://www.scopus.com/inward/record.url?scp=85042917330&partnerID=8YFLogxK

U2 - 10.1134/S0021364017240092

DO - 10.1134/S0021364017240092

M3 - Article

AN - SCOPUS:85042917330

VL - 106

SP - 780

EP - 784

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 12

ER -

ID: 10213916