Standard

Spin splitting of surface states in HgTe quantum wells. / Dobretsova, A. A.; Kvon, Z. D.; Krishtopenko, S. S. и др.

в: Fizika Nizkikh Temperatur, Том 45, № 2, 01.02.2019, стр. 185-191.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dobretsova, AA, Kvon, ZD, Krishtopenko, SS, Mikhailov, NN & Dvoretsky, SA 2019, 'Spin splitting of surface states in HgTe quantum wells', Fizika Nizkikh Temperatur, Том. 45, № 2, стр. 185-191.

APA

Dobretsova, A. A., Kvon, Z. D., Krishtopenko, S. S., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Spin splitting of surface states in HgTe quantum wells. Fizika Nizkikh Temperatur, 45(2), 185-191.

Vancouver

Dobretsova AA, Kvon ZD, Krishtopenko SS, Mikhailov NN, Dvoretsky SA. Spin splitting of surface states in HgTe quantum wells. Fizika Nizkikh Temperatur. 2019 февр. 1;45(2):185-191.

Author

Dobretsova, A. A. ; Kvon, Z. D. ; Krishtopenko, S. S. и др. / Spin splitting of surface states in HgTe quantum wells. в: Fizika Nizkikh Temperatur. 2019 ; Том 45, № 2. стр. 185-191.

BibTeX

@article{dee1779c81a14fbbb8528278f30590ff,
title = "Spin splitting of surface states in HgTe quantum wells",
abstract = "We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schr{\"o}dinger equations with eight-band k p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.",
keywords = "Quantum wells, Rashba effect, Shubnikov–de Haas oscillations, Spin splitting, Surface states",
author = "Dobretsova, {A. A.} and Kvon, {Z. D.} and Krishtopenko, {S. S.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
year = "2019",
month = feb,
day = "1",
language = "English",
volume = "45",
pages = "185--191",
journal = "Fizika Nizkikh Temperatur",
issn = "0132-6414",
publisher = "ILTPE-B. Verkin Institute for Low Temperature Physics and Engineering",
number = "2",

}

RIS

TY - JOUR

T1 - Spin splitting of surface states in HgTe quantum wells

AU - Dobretsova, A. A.

AU - Kvon, Z. D.

AU - Krishtopenko, S. S.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrödinger equations with eight-band k p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.

AB - We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi level arising due to Rashba-like spin splitting of the first conduction subband H1. The difference ΔNs in two concentrations as a function of the gate voltage is qualitatively explained by a proposed toy electrostatic model involving the surface states localized at quantum well interfaces. Experimental values of ΔNs are also in a good quantitative agreement with self-consistent calculations of Poisson and Schrödinger equations with eight-band k p Hamiltonian. Our results clearly demonstrate that the large spin splitting of the first conduction subband is caused by surface nature of H1 states hybridized with the heavy-hole band.

KW - Quantum wells

KW - Rashba effect

KW - Shubnikov–de Haas oscillations

KW - Spin splitting

KW - Surface states

UR - http://www.scopus.com/inward/record.url?scp=85060809908&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=36817135

M3 - Article

AN - SCOPUS:85060809908

VL - 45

SP - 185

EP - 191

JO - Fizika Nizkikh Temperatur

JF - Fizika Nizkikh Temperatur

SN - 0132-6414

IS - 2

ER -

ID: 18484564