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Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. / Akiyama, Ryota; Sumida, Kazuki; Ichinokura, Satoru и др.

в: Journal of Physics Condensed Matter, Том 30, № 26, 265001, 06.06.2018.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Akiyama, R, Sumida, K, Ichinokura, S, Nakanishi, R, Kimura, A, Kokh, KA, Tereshchenko, OE & Hasegawa, S 2018, 'Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3', Journal of Physics Condensed Matter, Том. 30, № 26, 265001. https://doi.org/10.1088/1361-648X/aac59b

APA

Akiyama, R., Sumida, K., Ichinokura, S., Nakanishi, R., Kimura, A., Kokh, K. A., Tereshchenko, O. E., & Hasegawa, S. (2018). Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. Journal of Physics Condensed Matter, 30(26), [265001]. https://doi.org/10.1088/1361-648X/aac59b

Vancouver

Akiyama R, Sumida K, Ichinokura S, Nakanishi R, Kimura A, Kokh KA и др. Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. Journal of Physics Condensed Matter. 2018 июнь 6;30(26):265001. doi: 10.1088/1361-648X/aac59b

Author

Akiyama, Ryota ; Sumida, Kazuki ; Ichinokura, Satoru и др. / Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. в: Journal of Physics Condensed Matter. 2018 ; Том 30, № 26.

BibTeX

@article{cc1c0c9949024eb0b79e1eb69a65fb00,
title = "Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3",
abstract = "We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.",
keywords = "(BiSb)Te, Berry phase, electrical transport, quantum oscillation, Shubnikov-de Haas oscillation, topological insulator, SB2TE3, CONDUCTION, BI2SE3, BI2TE3, SURFACE-STATE, (BixSb1-x)(2)Te-3",
author = "Ryota Akiyama and Kazuki Sumida and Satoru Ichinokura and Ryosuke Nakanishi and Akio Kimura and Kokh, {Konstantin A.} and Tereshchenko, {Oleg E.} and Shuji Hasegawa",
note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",
year = "2018",
month = jun,
day = "6",
doi = "10.1088/1361-648X/aac59b",
language = "English",
volume = "30",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "26",

}

RIS

TY - JOUR

T1 - Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3

AU - Akiyama, Ryota

AU - Sumida, Kazuki

AU - Ichinokura, Satoru

AU - Nakanishi, Ryosuke

AU - Kimura, Akio

AU - Kokh, Konstantin A.

AU - Tereshchenko, Oleg E.

AU - Hasegawa, Shuji

N1 - Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/6/6

Y1 - 2018/6/6

N2 - We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

AB - We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.

KW - (BiSb)Te

KW - Berry phase

KW - electrical transport

KW - quantum oscillation

KW - Shubnikov-de Haas oscillation

KW - topological insulator

KW - SB2TE3

KW - CONDUCTION

KW - BI2SE3

KW - BI2TE3

KW - SURFACE-STATE

KW - (BixSb1-x)(2)Te-3

UR - http://www.scopus.com/inward/record.url?scp=85049032658&partnerID=8YFLogxK

U2 - 10.1088/1361-648X/aac59b

DO - 10.1088/1361-648X/aac59b

M3 - Article

C2 - 29770777

AN - SCOPUS:85049032658

VL - 30

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 26

M1 - 265001

ER -

ID: 14191464