Research output: Contribution to journal › Article › peer-review
Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3. / Akiyama, Ryota; Sumida, Kazuki; Ichinokura, Satoru et al.
In: Journal of Physics Condensed Matter, Vol. 30, No. 26, 265001, 06.06.2018.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Shubnikov-de Haas oscillations in p and n-type topological insulator (BixSb1-x)2Te3
AU - Akiyama, Ryota
AU - Sumida, Kazuki
AU - Ichinokura, Satoru
AU - Nakanishi, Ryosuke
AU - Kimura, Akio
AU - Kokh, Konstantin A.
AU - Tereshchenko, Oleg E.
AU - Hasegawa, Shuji
N1 - Publisher Copyright: © 2018 IOP Publishing Ltd.
PY - 2018/6/6
Y1 - 2018/6/6
N2 - We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.
AB - We show Shubnikov-de Haas (SdH) oscillations in topological insulator (BixSb1-x)2Te3 flakes whose carrier types are p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, carrier mobility, and scattering time significantly changed by tuning the Fermi-level position with the concentration x. The analyses of SdH oscillations by Landau-level fan diagram, Lifshitz-Kosevich theory, and Dingle-plot in the p-type samples with x = 0.29 and 0.34 showed the Berry phase of zero and a relatively low mobility (2000-6000 cm2 V-1 s-1). This is due to the dominant bulk component in transport. On the other hand, the mobility in the n-type sample with x = 0.42 reached a very large value ∼17 000 cm2 V-1 s-1 and the Berry phase of near π, whereas the SdH oscillations were neither purely two- nor three-dimensional. These suggest that the transport channel has a surface-bulk coupling state which makes the carrier scattering lesser and enhances the mobility and has a character between two- and three-dimension.
KW - (BiSb)Te
KW - Berry phase
KW - electrical transport
KW - quantum oscillation
KW - Shubnikov-de Haas oscillation
KW - topological insulator
KW - SB2TE3
KW - CONDUCTION
KW - BI2SE3
KW - BI2TE3
KW - SURFACE-STATE
KW - (BixSb1-x)(2)Te-3
UR - http://www.scopus.com/inward/record.url?scp=85049032658&partnerID=8YFLogxK
U2 - 10.1088/1361-648X/aac59b
DO - 10.1088/1361-648X/aac59b
M3 - Article
C2 - 29770777
AN - SCOPUS:85049032658
VL - 30
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 26
M1 - 265001
ER -
ID: 14191464