Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Standard

Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates. / Smagina, Zh V.; Zinoviev, V. A.; Rudin, S. A. и др.

в: Semiconductors, Том 54, № 14, 12.2020, стр. 1866-1868.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Smagina, ZV, Zinoviev, VA, Rudin, SA, Rodyakina, EE , Novikov, PL , Nenashev, AV & Dvurechenskii, AV 2020, 'Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates', Semiconductors, Том. 54, № 14, стр. 1866-1868. https://doi.org/10.1134/S1063782620140298

APA

Smagina, Z. V., Zinoviev, V. A., Rudin, S. A., Rodyakina, E. E., Novikov, P. L., Nenashev, A. V., & Dvurechenskii, A. V. (2020). Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates. Semiconductors, 54(14), 1866-1868. https://doi.org/10.1134/S1063782620140298

Vancouver

Smagina ZV, Zinoviev VA, Rudin SA, Rodyakina EE , Novikov PL , Nenashev AV и др. Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates. Semiconductors. 2020 дек.;54(14):1866-1868. doi: 10.1134/S1063782620140298

Author

Smagina, Zh V. ; Zinoviev, V. A. ; Rudin, S. A. и др. / Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates. в: Semiconductors. 2020 ; Том 54, № 14. стр. 1866-1868.

BibTeX

@article{7191072c6e5847678ba3e7d8f792c181,

title = "Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates",

abstract = "Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a varying spacing. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on spacing for the both lattice types. In the case of the small spacing Ge nanoislands are located mainly inside the pits, while for the larger inter-pit distance the groups of Ge nanoislands at the pit periphery is also observed. This effect is interpreted in terms of critical volume for the 3D island nucleation which is achieved at the pit periphery with the increase of Ge amount deposited per pit. The effect of nanoisland growth, first inside the pits, then at their periphery was reproduced by Monte Carlo simulations of Ge growth on the pit-patterned Si substrates.",

keywords = "heteroepitaxy, Monte Carlo simulations, pit-patterned substrates, quantum dots",

author = "Smagina, {Zh V.} and Zinoviev, {V. A.} and Rudin, {S. A.} and Rodyakina, {E. E.} and Novikov, {P. L.} and Nenashev, {A. V.} and Dvurechenskii, {A. V.}",

year = "2020",

month = dec,

doi = "10.1134/S1063782620140298",

language = "English",

volume = "54",

pages = "1866--1868",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "14",

}

RIS

TY - JOUR

T1 - Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

AU - Smagina, Zh V.

AU - Zinoviev, V. A.

AU - Rudin, S. A.

AU - Rodyakina, E. E.

AU - Novikov, P. L.

AU - Nenashev, A. V.

AU - Dvurechenskii, A. V.

PY - 2020/12

Y1 - 2020/12

N2 - Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a varying spacing. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on spacing for the both lattice types. In the case of the small spacing Ge nanoislands are located mainly inside the pits, while for the larger inter-pit distance the groups of Ge nanoislands at the pit periphery is also observed. This effect is interpreted in terms of critical volume for the 3D island nucleation which is achieved at the pit periphery with the increase of Ge amount deposited per pit. The effect of nanoisland growth, first inside the pits, then at their periphery was reproduced by Monte Carlo simulations of Ge growth on the pit-patterned Si substrates.

AB - Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a varying spacing. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on spacing for the both lattice types. In the case of the small spacing Ge nanoislands are located mainly inside the pits, while for the larger inter-pit distance the groups of Ge nanoislands at the pit periphery is also observed. This effect is interpreted in terms of critical volume for the 3D island nucleation which is achieved at the pit periphery with the increase of Ge amount deposited per pit. The effect of nanoisland growth, first inside the pits, then at their periphery was reproduced by Monte Carlo simulations of Ge growth on the pit-patterned Si substrates.

KW - heteroepitaxy

KW - Monte Carlo simulations

KW - pit-patterned substrates

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=85099093500&partnerID=8YFLogxK

U2 - 10.1134/S1063782620140298

DO - 10.1134/S1063782620140298

M3 - Article

AN - SCOPUS:85099093500

VL - 54

SP - 1866

EP - 1868

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 14

ER -

ID: 27415937