Research output: Contribution to journal › Article › peer-review
Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates. / Smagina, Zh V.; Zinoviev, V. A.; Rudin, S. A. et al.
In: Semiconductors, Vol. 54, No. 14, 12.2020, p. 1866-1868.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates
AU - Smagina, Zh V.
AU - Zinoviev, V. A.
AU - Rudin, S. A.
AU - Rodyakina, E. E.
AU - Novikov, P. L.
AU - Nenashev, A. V.
AU - Dvurechenskii, A. V.
N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/12
Y1 - 2020/12
N2 - Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a varying spacing. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on spacing for the both lattice types. In the case of the small spacing Ge nanoislands are located mainly inside the pits, while for the larger inter-pit distance the groups of Ge nanoislands at the pit periphery is also observed. This effect is interpreted in terms of critical volume for the 3D island nucleation which is achieved at the pit periphery with the increase of Ge amount deposited per pit. The effect of nanoisland growth, first inside the pits, then at their periphery was reproduced by Monte Carlo simulations of Ge growth on the pit-patterned Si substrates.
AB - Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a varying spacing. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on spacing for the both lattice types. In the case of the small spacing Ge nanoislands are located mainly inside the pits, while for the larger inter-pit distance the groups of Ge nanoislands at the pit periphery is also observed. This effect is interpreted in terms of critical volume for the 3D island nucleation which is achieved at the pit periphery with the increase of Ge amount deposited per pit. The effect of nanoisland growth, first inside the pits, then at their periphery was reproduced by Monte Carlo simulations of Ge growth on the pit-patterned Si substrates.
KW - heteroepitaxy
KW - Monte Carlo simulations
KW - pit-patterned substrates
KW - quantum dots
UR - http://www.scopus.com/inward/record.url?scp=85099093500&partnerID=8YFLogxK
U2 - 10.1134/S1063782620140298
DO - 10.1134/S1063782620140298
M3 - Article
AN - SCOPUS:85099093500
VL - 54
SP - 1866
EP - 1868
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 14
ER -
ID: 27415937