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Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. / Shipulin, Pavel V.; Nastovjak, Alla G.; Shwartz, Nataliya L.

2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. стр. 32-35 9153341 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2020-June).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Shipulin, PV, Nastovjak, AG & Shwartz, NL 2020, Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. в 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020., 9153341, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, Том. 2020-June, IEEE Computer Society, стр. 32-35, 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020, Chemal, Российская Федерация, 29.06.2020. https://doi.org/10.1109/EDM49804.2020.9153341

APA

Shipulin, P. V., Nastovjak, A. G., & Shwartz, N. L. (2020). Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. в 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 (стр. 32-35). [9153341] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2020-June). IEEE Computer Society. https://doi.org/10.1109/EDM49804.2020.9153341

Vancouver

Shipulin PV, Nastovjak AG, Shwartz NL. Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. в 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society. 2020. стр. 32-35. 9153341. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM49804.2020.9153341

Author

Shipulin, Pavel V. ; Nastovjak, Alla G. ; Shwartz, Nataliya L. / Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. стр. 32-35 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

BibTeX

@inproceedings{a7ed024b16dd4a25861fc565cce9b2f3,
title = "Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux",
abstract = "Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth. ",
keywords = "GaAs, Monte Carlo, Nanowire, Simulation",
author = "Shipulin, {Pavel V.} and Nastovjak, {Alla G.} and Shwartz, {Nataliya L.}",
year = "2020",
month = jun,
day = "1",
doi = "10.1109/EDM49804.2020.9153341",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "32--35",
booktitle = "2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020",
address = "United States",
note = "21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 ; Conference date: 29-06-2020 Through 03-07-2020",

}

RIS

TY - GEN

T1 - Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux

AU - Shipulin, Pavel V.

AU - Nastovjak, Alla G.

AU - Shwartz, Nataliya L.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth.

AB - Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth.

KW - GaAs

KW - Monte Carlo

KW - Nanowire

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=85090861210&partnerID=8YFLogxK

U2 - 10.1109/EDM49804.2020.9153341

DO - 10.1109/EDM49804.2020.9153341

M3 - Conference contribution

AN - SCOPUS:85090861210

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 32

EP - 35

BT - 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020

PB - IEEE Computer Society

T2 - 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020

Y2 - 29 June 2020 through 3 July 2020

ER -

ID: 25309693