Standard
Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. / Shipulin, Pavel V.; Nastovjak, Alla G.; Shwartz, Nataliya L.
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. p. 32-35 9153341 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2020-June).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Harvard
Shipulin, PV, Nastovjak, AG & Shwartz, NL 2020,
Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. in
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020., 9153341, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, vol. 2020-June, IEEE Computer Society, pp. 32-35, 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020, Chemal, Russian Federation,
29.06.2020.
https://doi.org/10.1109/EDM49804.2020.9153341APA
Vancouver
Shipulin PV, Nastovjak AG, Shwartz NL.
Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. In 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society. 2020. p. 32-35. 9153341. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM49804.2020.9153341
Author
Shipulin, Pavel V. ; Nastovjak, Alla G. ; Shwartz, Nataliya L. /
Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux. 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. pp. 32-35 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).
BibTeX
@inproceedings{a7ed024b16dd4a25861fc565cce9b2f3,
title = "Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux",
abstract = "Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth. ",
keywords = "GaAs, Monte Carlo, Nanowire, Simulation",
author = "Shipulin, {Pavel V.} and Nastovjak, {Alla G.} and Shwartz, {Nataliya L.}",
year = "2020",
month = jun,
day = "1",
doi = "10.1109/EDM49804.2020.9153341",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "32--35",
booktitle = "2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020",
address = "United States",
note = "21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 ; Conference date: 29-06-2020 Through 03-07-2020",
}
RIS
TY - GEN
T1 - Self-catalyzed GaAs Nanowire Growth at Alternate Arsenic Flux
AU - Shipulin, Pavel V.
AU - Nastovjak, Alla G.
AU - Shwartz, Nataliya L.
PY - 2020/6/1
Y1 - 2020/6/1
N2 - Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth.
AB - Monte Carlo simulation of GaAs nanowires MBE pulse growth was carried out. The arsenic flux pulse durations and the pauses between pulses were analyzed for optimizing growth conditions. To increase the axial wire growth rate at the initial stage the regime of additional arsenic flux modulation was considered. Growth in a high arsenic flux was proposed to start and stepwise reduce it during the growth process. This approach made it possible to increase the lifetime of a seed droplet at the nanowire top at a high crystal growth rate at the initial stage of growth.
KW - GaAs
KW - Monte Carlo
KW - Nanowire
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=85090861210&partnerID=8YFLogxK
U2 - 10.1109/EDM49804.2020.9153341
DO - 10.1109/EDM49804.2020.9153341
M3 - Conference contribution
AN - SCOPUS:85090861210
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 32
EP - 35
BT - 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
PB - IEEE Computer Society
T2 - 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
Y2 - 29 June 2020 through 3 July 2020
ER -
