Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Searching Optimal Growth Parameters for HfO Applied by Plasma-Enhanced Atomic Layer Deposition Method. / Krasnova, Irina A.; Gorshkov, Dmitry V.; Zakirov, Evgeny R. и др.
Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022. IEEE Computer Society, 2022. стр. 75-78 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Том 2022-June).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Searching Optimal Growth Parameters for HfO Applied by Plasma-Enhanced Atomic Layer Deposition Method
AU - Krasnova, Irina A.
AU - Gorshkov, Dmitry V.
AU - Zakirov, Evgeny R.
AU - Sidorov, Georgiy Yu
AU - Sabinina, Irina V.
N1 - Funding Information: This study was supported by the Russian Science Foundation, project no. 21-72-10134. Publisher Copyright: © 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The properties of thin HfO2 films grown by plasma-enhanced atomic layer deposition on Si substrates at various temperatures 80,120, and 160°C are studied in this work. For each temperature, the dependences of the growth rate per cycle on the post-plasma pumping time were determined. For the majority of temperatures, saturation of the growth rate per cycle depend of the post-plasma purge time was observed. Accordingly, the optimal times of growth stages were determined for temperatures 80,120, and 160°C. Studies of the chemical composition of the HfO2 film by the XPS method showed that hafnium is bound to oxygen,and increasing of the post-plasma purge time reduces the content of suchimpurities as nitrogen and carbon. The electrophysical properties of HfO2 films have been measured: such asthe capacitance, the dielectric constant and theleakage current density. The values of the built-in charge in HfO2 film were 2.92 and 2.08 × 10-7 C/cm2 for growth temperaturesof 120°C and 160°C, respectively. The dielectric constant for the HfO2 film was 10.8 and 11.8 for temperatures of 120 and 160°C, respectively.
AB - The properties of thin HfO2 films grown by plasma-enhanced atomic layer deposition on Si substrates at various temperatures 80,120, and 160°C are studied in this work. For each temperature, the dependences of the growth rate per cycle on the post-plasma pumping time were determined. For the majority of temperatures, saturation of the growth rate per cycle depend of the post-plasma purge time was observed. Accordingly, the optimal times of growth stages were determined for temperatures 80,120, and 160°C. Studies of the chemical composition of the HfO2 film by the XPS method showed that hafnium is bound to oxygen,and increasing of the post-plasma purge time reduces the content of suchimpurities as nitrogen and carbon. The electrophysical properties of HfO2 films have been measured: such asthe capacitance, the dielectric constant and theleakage current density. The values of the built-in charge in HfO2 film were 2.92 and 2.08 × 10-7 C/cm2 for growth temperaturesof 120°C and 160°C, respectively. The dielectric constant for the HfO2 film was 10.8 and 11.8 for temperatures of 120 and 160°C, respectively.
KW - CV characteristics
KW - HfO
KW - PE-ALD
KW - plasma-enhanced atomic layer deposition
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=85137320259&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/c614916a-c0d0-3ed4-b164-6b7876f5df7d/
U2 - 10.1109/EDM55285.2022.9855104
DO - 10.1109/EDM55285.2022.9855104
M3 - Conference contribution
AN - SCOPUS:85137320259
SN - 9781665498043
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 75
EP - 78
BT - Proceedings of the 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
PB - IEEE Computer Society
T2 - 23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022
Y2 - 30 June 2022 through 4 July 2022
ER -
ID: 37142165