Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Raman scattering in boron doped nanocrystalline diamond films : Manifestation of Fano interference and phonon confinement effect. / Volodin, V. A.; Mortet, V.; Taylor, A. и др.
в: Solid State Communications, Том 276, 01.08.2018, стр. 33-36.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Raman scattering in boron doped nanocrystalline diamond films
T2 - Manifestation of Fano interference and phonon confinement effect
AU - Volodin, V. A.
AU - Mortet, V.
AU - Taylor, A.
AU - Remes, Z.
AU - Stuchliková, T. H.
AU - Stuchlik, J.
PY - 2018/8/1
Y1 - 2018/8/1
N2 - Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman spectroscopy. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline grains and Fano interference effect due to the contribution of electron Raman scattering in heavily doped p-type diamond films. The increase of boron concentration led to decrease of the size of crystalline diamond grains. The films are semitransparent and have good conductivity, so that it can be used as transparent electrodes in giant-scale electronics and optoelectronics.
AB - Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman spectroscopy. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline grains and Fano interference effect due to the contribution of electron Raman scattering in heavily doped p-type diamond films. The increase of boron concentration led to decrease of the size of crystalline diamond grains. The films are semitransparent and have good conductivity, so that it can be used as transparent electrodes in giant-scale electronics and optoelectronics.
KW - Diamond
KW - Fano interference
KW - Raman scattering
UR - http://www.scopus.com/inward/record.url?scp=85056378759&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2018.04.004
DO - 10.1016/j.ssc.2018.04.004
M3 - Article
AN - SCOPUS:85056378759
VL - 276
SP - 33
EP - 36
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
ER -
ID: 17415301