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Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications. / Aleshkin, V. Ya; Dubinov, A. A.; Rumyantsev, V. V. и др.

в: Journal of Physics Condensed Matter, Том 30, № 49, 495301, 12.12.2018, стр. 495301.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Aleshkin, VY, Dubinov, AA, Rumyantsev, VV, Fadeev, MA, Domnina, OL, Mikhailov, NN, Dvoretsky, SA, Teppe, F, Gavrilenko, VI & Morozov, SV 2018, 'Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications', Journal of Physics Condensed Matter, Том. 30, № 49, 495301, стр. 495301. https://doi.org/10.1088/1361-648X/aaebf5

APA

Aleshkin, V. Y., Dubinov, A. A., Rumyantsev, V. V., Fadeev, M. A., Domnina, O. L., Mikhailov, N. N., Dvoretsky, S. A., Teppe, F., Gavrilenko, V. I., & Morozov, S. V. (2018). Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications. Journal of Physics Condensed Matter, 30(49), 495301. [495301]. https://doi.org/10.1088/1361-648X/aaebf5

Vancouver

Aleshkin VY, Dubinov AA, Rumyantsev VV, Fadeev MA, Domnina OL, Mikhailov NN и др. Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications. Journal of Physics Condensed Matter. 2018 дек. 12;30(49):495301. 495301. doi: 10.1088/1361-648X/aaebf5

Author

Aleshkin, V. Ya ; Dubinov, A. A. ; Rumyantsev, V. V. и др. / Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications. в: Journal of Physics Condensed Matter. 2018 ; Том 30, № 49. стр. 495301.

BibTeX

@article{25188d6392874b08b9203a925dac1114,
title = "Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications",
abstract = "Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.",
keywords = "carrier lifetime, HgCdTe, long-wavelength lasers, narrow-gap, radiative recombination, MU-M, LIFETIMES, STIMULATED-EMISSION, HGCDTE, WAVELENGTH, ALLOY, PHOTOCONDUCTIVITY RELAXATION, RANGE",
author = "Aleshkin, {V. Ya} and Dubinov, {A. A.} and Rumyantsev, {V. V.} and Fadeev, {M. A.} and Domnina, {O. L.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and F. Teppe and Gavrilenko, {V. I.} and Morozov, {S. V.}",
note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",
year = "2018",
month = dec,
day = "12",
doi = "10.1088/1361-648X/aaebf5",
language = "English",
volume = "30",
pages = "495301",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "49",

}

RIS

TY - JOUR

T1 - Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

AU - Aleshkin, V. Ya

AU - Dubinov, A. A.

AU - Rumyantsev, V. V.

AU - Fadeev, M. A.

AU - Domnina, O. L.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Teppe, F.

AU - Gavrilenko, V. I.

AU - Morozov, S. V.

N1 - Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/12/12

Y1 - 2018/12/12

N2 - Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.

AB - Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.

KW - carrier lifetime

KW - HgCdTe

KW - long-wavelength lasers

KW - narrow-gap

KW - radiative recombination

KW - MU-M

KW - LIFETIMES

KW - STIMULATED-EMISSION

KW - HGCDTE

KW - WAVELENGTH

KW - ALLOY

KW - PHOTOCONDUCTIVITY RELAXATION

KW - RANGE

UR - http://www.scopus.com/inward/record.url?scp=85056715820&partnerID=8YFLogxK

U2 - 10.1088/1361-648X/aaebf5

DO - 10.1088/1361-648X/aaebf5

M3 - Article

C2 - 30457115

AN - SCOPUS:85056715820

VL - 30

SP - 495301

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 49

M1 - 495301

ER -

ID: 17669698