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Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation. / Dvurechenskii, Anatoly V.; Kacyuba, Aleksey V.; Kamaev, Gennadiy N. и др.

в: Nanomaterials, Том 12, № 9, 1407, 01.05.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dvurechenskii, AV, Kacyuba, AV, Kamaev, GN, Volodin, VA & Smagina, ZV 2022, 'Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation', Nanomaterials, Том. 12, № 9, 1407. https://doi.org/10.3390/nano12091407

APA

Dvurechenskii, A. V., Kacyuba, A. V., Kamaev, G. N., Volodin, V. A., & Smagina, Z. V. (2022). Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation. Nanomaterials, 12(9), [1407]. https://doi.org/10.3390/nano12091407

Vancouver

Dvurechenskii AV, Kacyuba AV, Kamaev GN, Volodin VA, Smagina ZV. Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation. Nanomaterials. 2022 май 1;12(9):1407. doi: 10.3390/nano12091407

Author

Dvurechenskii, Anatoly V. ; Kacyuba, Aleksey V. ; Kamaev, Gennadiy N. и др. / Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation. в: Nanomaterials. 2022 ; Том 12, № 9.

BibTeX

@article{bec7556947bb4efcbb42bcc8d87ce3f0,
title = "Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation",
abstract = "The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose. Irradiation in the process of the epitaxial CaF2 film growth leads to the formation of CaSi2 nanowhiskers with an average size of 5 µm oriented along the direction <110>. The electron irradiation of the formed film, under similar conditions, leads to the homogeneous nucleation of CaSi2 crystals and their proliferation as inclusions in the CaF2 film. It is shown that both approaches lead to the formation of CaSi2 crystals of the 3R polymorph in the irradiated region of a 10 nm thick CaF2 layer.",
keywords = "calcium compounds, crystal structure, electron irradiation, molecular-beam epitaxy, nanostructures, semiconducting silicon",
author = "Dvurechenskii, {Anatoly V.} and Kacyuba, {Aleksey V.} and Kamaev, {Gennadiy N.} and Volodin, {Vladimir A.} and Smagina, {Zhanna V.}",
note = "Funding Information: Funding: The reported study was funded by the RFBR and the ROSATOM State Corporation within the project No 20-21-00028. Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2022",
month = may,
day = "1",
doi = "10.3390/nano12091407",
language = "English",
volume = "12",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "9",

}

RIS

TY - JOUR

T1 - Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation

AU - Dvurechenskii, Anatoly V.

AU - Kacyuba, Aleksey V.

AU - Kamaev, Gennadiy N.

AU - Volodin, Vladimir A.

AU - Smagina, Zhanna V.

N1 - Funding Information: Funding: The reported study was funded by the RFBR and the ROSATOM State Corporation within the project No 20-21-00028. Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/5/1

Y1 - 2022/5/1

N2 - The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose. Irradiation in the process of the epitaxial CaF2 film growth leads to the formation of CaSi2 nanowhiskers with an average size of 5 µm oriented along the direction <110>. The electron irradiation of the formed film, under similar conditions, leads to the homogeneous nucleation of CaSi2 crystals and their proliferation as inclusions in the CaF2 film. It is shown that both approaches lead to the formation of CaSi2 crystals of the 3R polymorph in the irradiated region of a 10 nm thick CaF2 layer.

AB - The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose. Irradiation in the process of the epitaxial CaF2 film growth leads to the formation of CaSi2 nanowhiskers with an average size of 5 µm oriented along the direction <110>. The electron irradiation of the formed film, under similar conditions, leads to the homogeneous nucleation of CaSi2 crystals and their proliferation as inclusions in the CaF2 film. It is shown that both approaches lead to the formation of CaSi2 crystals of the 3R polymorph in the irradiated region of a 10 nm thick CaF2 layer.

KW - calcium compounds

KW - crystal structure

KW - electron irradiation

KW - molecular-beam epitaxy

KW - nanostructures

KW - semiconducting silicon

UR - http://www.scopus.com/inward/record.url?scp=85128716436&partnerID=8YFLogxK

U2 - 10.3390/nano12091407

DO - 10.3390/nano12091407

M3 - Article

C2 - 35564116

AN - SCOPUS:85128716436

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 9

M1 - 1407

ER -

ID: 36028953