Standard

Quantum capacitance of a three-dimensional topological insulator based on HgTe. / Kozlov, D. A.; Bauer, D.; Ziegler, J. и др.

в: Low Temperature Physics, Том 43, № 4, 01.04.2017, стр. 430-436.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kozlov, DA, Bauer, D, Ziegler, J, Fischer, R, Savchenko, ML, Kvon, ZD, Mikhailov, NN, Dvoretsky, SA & Weiss, D 2017, 'Quantum capacitance of a three-dimensional topological insulator based on HgTe', Low Temperature Physics, Том. 43, № 4, стр. 430-436. https://doi.org/10.1063/1.4983330

APA

Kozlov, D. A., Bauer, D., Ziegler, J., Fischer, R., Savchenko, M. L., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Weiss, D. (2017). Quantum capacitance of a three-dimensional topological insulator based on HgTe. Low Temperature Physics, 43(4), 430-436. https://doi.org/10.1063/1.4983330

Vancouver

Kozlov DA, Bauer D, Ziegler J, Fischer R, Savchenko ML, Kvon ZD и др. Quantum capacitance of a three-dimensional topological insulator based on HgTe. Low Temperature Physics. 2017 апр. 1;43(4):430-436. doi: 10.1063/1.4983330

Author

Kozlov, D. A. ; Bauer, D. ; Ziegler, J. и др. / Quantum capacitance of a three-dimensional topological insulator based on HgTe. в: Low Temperature Physics. 2017 ; Том 43, № 4. стр. 430-436.

BibTeX

@article{d0c65d85a8674f17952040015cdbf2f8,
title = "Quantum capacitance of a three-dimensional topological insulator based on HgTe",
abstract = "The quantum capacitance that directly characterizes the density of states of highly mobile Dirac two-dimensional states formed on the surface of a stressed HgTe film is studied experimentally. It is shown that, as opposed to the oscillations in the magnetotransport to which all the existing types of carriers contribute, the quantum oscillations observed in the magnetic capacitance correspond to electrons on the upper surface of the film. Thus, capacitance spectroscopy is a selective technique for studying the properties of an individual topological surface, even when a large number of bulk carriers are present. Because of this feature, for the first time we have obtained data on the phase shift in the Shubnikov-de Haas oscillations usually associated with the Berry phase for an isolated Dirac cone and found its dependence on the location of the Fermi level.",
keywords = "DENSITY-OF-STATES",
author = "Kozlov, {D. A.} and D. Bauer and J. Ziegler and R. Fischer and Savchenko, {M. L.} and Kvon, {Z. D.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and D. Weiss",
year = "2017",
month = apr,
day = "1",
doi = "10.1063/1.4983330",
language = "English",
volume = "43",
pages = "430--436",
journal = "Low Temperature Physics",
issn = "1063-777X",
publisher = "American Institute of Physics",
number = "4",

}

RIS

TY - JOUR

T1 - Quantum capacitance of a three-dimensional topological insulator based on HgTe

AU - Kozlov, D. A.

AU - Bauer, D.

AU - Ziegler, J.

AU - Fischer, R.

AU - Savchenko, M. L.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Weiss, D.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - The quantum capacitance that directly characterizes the density of states of highly mobile Dirac two-dimensional states formed on the surface of a stressed HgTe film is studied experimentally. It is shown that, as opposed to the oscillations in the magnetotransport to which all the existing types of carriers contribute, the quantum oscillations observed in the magnetic capacitance correspond to electrons on the upper surface of the film. Thus, capacitance spectroscopy is a selective technique for studying the properties of an individual topological surface, even when a large number of bulk carriers are present. Because of this feature, for the first time we have obtained data on the phase shift in the Shubnikov-de Haas oscillations usually associated with the Berry phase for an isolated Dirac cone and found its dependence on the location of the Fermi level.

AB - The quantum capacitance that directly characterizes the density of states of highly mobile Dirac two-dimensional states formed on the surface of a stressed HgTe film is studied experimentally. It is shown that, as opposed to the oscillations in the magnetotransport to which all the existing types of carriers contribute, the quantum oscillations observed in the magnetic capacitance correspond to electrons on the upper surface of the film. Thus, capacitance spectroscopy is a selective technique for studying the properties of an individual topological surface, even when a large number of bulk carriers are present. Because of this feature, for the first time we have obtained data on the phase shift in the Shubnikov-de Haas oscillations usually associated with the Berry phase for an isolated Dirac cone and found its dependence on the location of the Fermi level.

KW - DENSITY-OF-STATES

UR - http://www.scopus.com/inward/record.url?scp=85019663378&partnerID=8YFLogxK

U2 - 10.1063/1.4983330

DO - 10.1063/1.4983330

M3 - Article

AN - SCOPUS:85019663378

VL - 43

SP - 430

EP - 436

JO - Low Temperature Physics

JF - Low Temperature Physics

SN - 1063-777X

IS - 4

ER -

ID: 10036106