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Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy. / Tarasov, A. S.; Mikhailov, N. N.; Dvoretsky, S. A. и др.

в: Semiconductors, Том 55, 12.2021, стр. S62-S66.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tarasov, AS, Mikhailov, NN, Dvoretsky, SA, Menshchikov, RV, Uzhakov, IN, Kozhukhov, AS, Fedosenko, EV & Tereshchenko, OE 2021, 'Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy', Semiconductors, Том. 55, стр. S62-S66. https://doi.org/10.1134/S1063782621090220

APA

Tarasov, A. S., Mikhailov, N. N., Dvoretsky, S. A., Menshchikov, R. V., Uzhakov, I. N., Kozhukhov, A. S., Fedosenko, E. V., & Tereshchenko, O. E. (2021). Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy. Semiconductors, 55, S62-S66. https://doi.org/10.1134/S1063782621090220

Vancouver

Tarasov AS, Mikhailov NN, Dvoretsky SA, Menshchikov RV, Uzhakov IN, Kozhukhov AS и др. Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy. Semiconductors. 2021 дек.;55:S62-S66. doi: 10.1134/S1063782621090220

Author

Tarasov, A. S. ; Mikhailov, N. N. ; Dvoretsky, S. A. и др. / Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy. в: Semiconductors. 2021 ; Том 55. стр. S62-S66.

BibTeX

@article{e2250eda24c24c42b77aced5a689d972,
title = "Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy",
abstract = "An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at ~125 and ≤250°C) are observed. At the temperature T > 250°C, elemental tellurium is desorbed, and a Te-stabilized (1 × 1) CdTe(013) structure is formed.",
keywords = "chemical preparation, GaAs substrate, HgCdTe, PbSnTe, RHEED, single-wavelength ellipsometry, surface, XPS",
author = "Tarasov, {A. S.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Menshchikov, {R. V.} and Uzhakov, {I. N.} and Kozhukhov, {A. S.} and Fedosenko, {E. V.} and Tereshchenko, {O. E.}",
note = "Funding Information: The part of the study concerned with the MBE growth of CdHgTe HESs and the ellipsometry measurements was supported by the Russian Foundation for Basic Research, project no. 18-29-20053. The part of the study concerned with the growth of PbSnTe films was supported by the Russian Foundation for Basic Research, project no. 20-32-90154. The part of the study concerned with the XPS measurements was supported by the Russian Foundation for Basic Research and Novosibirsk region, project no. 20-42-543015. The part of the study concerned with the AFM measurements was supported by the Russian Science Foundation, project no. 18-72-10063. Publisher Copyright: {\textcopyright} 2021.",
year = "2021",
month = dec,
doi = "10.1134/S1063782621090220",
language = "English",
volume = "55",
pages = "S62--S66",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",

}

RIS

TY - JOUR

T1 - Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy

AU - Tarasov, A. S.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Menshchikov, R. V.

AU - Uzhakov, I. N.

AU - Kozhukhov, A. S.

AU - Fedosenko, E. V.

AU - Tereshchenko, O. E.

N1 - Funding Information: The part of the study concerned with the MBE growth of CdHgTe HESs and the ellipsometry measurements was supported by the Russian Foundation for Basic Research, project no. 18-29-20053. The part of the study concerned with the growth of PbSnTe films was supported by the Russian Foundation for Basic Research, project no. 20-32-90154. The part of the study concerned with the XPS measurements was supported by the Russian Foundation for Basic Research and Novosibirsk region, project no. 20-42-543015. The part of the study concerned with the AFM measurements was supported by the Russian Science Foundation, project no. 18-72-10063. Publisher Copyright: © 2021.

PY - 2021/12

Y1 - 2021/12

N2 - An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at ~125 and ≤250°C) are observed. At the temperature T > 250°C, elemental tellurium is desorbed, and a Te-stabilized (1 × 1) CdTe(013) structure is formed.

AB - An atomically clean and structurally ordered surface of the CdTe layer of a (013)-oriented GaAs/ZnTe/CdTe substrate after storage in air is obtained by treatment in isopropyl alcohol saturated with hydrochloric-acid vapors, with subsequent thermal annealing in ultrahigh vacuum. It is shown that chemical treatment of the CdTe surface results in the removal of native oxides and in enrichment of the surface with an elemental Te layer. During heating in vacuum, two stages of change in the state of the surface (at ~125 and ≤250°C) are observed. At the temperature T > 250°C, elemental tellurium is desorbed, and a Te-stabilized (1 × 1) CdTe(013) structure is formed.

KW - chemical preparation

KW - GaAs substrate

KW - HgCdTe

KW - PbSnTe

KW - RHEED

KW - single-wavelength ellipsometry

KW - surface

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=85128277946&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/7f71f51d-8936-3413-8571-6c2ecc961ea1/

U2 - 10.1134/S1063782621090220

DO - 10.1134/S1063782621090220

M3 - Article

AN - SCOPUS:85128277946

VL - 55

SP - S62-S66

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

ER -

ID: 35949936